Observation of Electron-Wave Diffraction with Scanning Probe based on Reciprocity Principle
基于互易原理的扫描探针电子波衍射观测
基本信息
- 批准号:15360184
- 负责人:
- 金额:$ 8.83万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (B)
- 财政年份:2003
- 资助国家:日本
- 起止时间:2003 至 2004
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
In order to observe diffraction phenomena of hot electrons in solids using scanning probes based on the reciprocity principle, theoretical simulations have been performed to find required current sensitivity pico-ampere(pA) level. Experimentally, the Ballistic Electron Emission Microscopy(BEEM) technique has been improved to obtain uniform current signal in pA level over sample surfaces.Three-dimensional Schroedinger equation was numerically analyzed using the finite-difference time-domain(FDTD) method with absorbing boundaries. Appling this analysis to phase-shifter structures, followings have been clarified ; conditions of the energy width of the injected electron to obtain the diffraction fringe with pA variation, conditions for spherical wave generation in semiconductors. It has been found that the diffraction caused by constriction of the electron beam reduces the transmission efficiency by factor 5. We have proposed to take this diffraction effect into account in BEEM analyses.A … More BEEM apparatus has been constructed based on existing scanning tunnel microscope by installing the control system bought newly. Using GaAs/Au Schottky samples, current sensitivity of pA has been achieved by eliminating noises. Strategy for the probe scanning has been developed to obtain two-dimensional image of BEEM signal ; the probe stays at one point for a period required to eliminate the noise.In order to obtain uniform BEEM signal over the surface, intact and clean Schottky interfaces have been created by devising a novel self-alignment process. Finally it has been revealed that grain formations in 10 nm-thick Au films limit uniformity in BEEM signal in the sample surface.In summary, we have clarified possibilities and conditions to observe the electron wave diffraction in the solid by probes based on the reciprocity principle and established the BEEM technique as foundations to achieve the observation. We have approached to the target leaving a final step to form the conductive surface layer by epitaxy. Less
为了利用基于互易原理的扫描探针观察固体中热电子的衍射现象,进行了理论模拟,找出了所需的电流灵敏度皮安(pA)水平。实验上,改进了弹道电子发射显微镜(BEEM)技术,使其在样品表面上获得均匀的pA级电流信号。采用带吸收边界的时域有限差分法对三维薛定谔方程进行了数值分析。将这一分析应用于移相器结构,阐明了以下几点:获得随pA变化的衍射条纹的注入电子能量宽度的条件,半导体中产生球形波的条件。发现电子束收缩引起的衍射使透射效率降低了5倍。我们建议在BEEM分析中考虑这种衍射效应。在现有扫描隧道显微镜的基础上,通过安装新购买的控制系统,构建了更多的BEEM仪器。利用GaAs/Au肖特基样品,通过消除噪声实现了pA的电流灵敏度。提出了一种探针扫描策略,以获取BEEM信号的二维图像;探头在一个点停留一段时间以消除噪声。为了在表面上获得均匀的BEEM信号,通过设计一种新颖的自对准过程,创建了完整而干净的肖特基界面。最后揭示了10 nm厚Au薄膜中的晶粒结构限制了样品表面BEEM信号的均匀性。综上所述,我们明确了基于互易原理的探针观察固体中电子波衍射的可能性和条件,并建立了BEEM技术作为实现观测的基础。我们已经接近目标,剩下最后一步是通过外延形成导电表面层。少
项目成果
期刊论文数量(70)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
InP Hot Electron Transistors with Emitter Mesa Fabricated between Gate Electrodes for Reduction in Emitter-Gate Gate-Leakage Current
InP 热电子晶体管,在栅电极之间制作发射极台面,以减少发射极-栅极漏电流
- DOI:
- 发表时间:2004
- 期刊:
- 影响因子:0
- 作者:T.Hashiba;Y.Takaki;K.Takeuchi et al.
- 通讯作者:K.Takeuchi et al.
K.Furuya et al.: "Young's Double-Slit Interference Observation of Hot Electrons in Semiconductors"Physical Review Letters. 19・21. 216803-1-216803-4 (2003)
K.Furuya 等:“半导体中热电子的杨氏双缝干涉观察”物理评论快报 19・21(2003 年)。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
K.Takeuchi et al.: "InP Hot Electron Transistors with Emitter Mesa Fabricated between Gate Electrodes for Reduction in Emitter-Gate Gate-Leakage Current"Japanese Journal of Applied Physics. 43・2A. L183-L186 (2004)
K.Takeuchi 等人:“在栅极电极之间制造发射极台面的 InP 热电子晶体管,以减少发射极栅极漏电流”日本应用物理学杂志 43・2A (2004)。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
Young's Double-Slit Interference Experiment of Hot Electron in Semiconductors
半导体中热电子的杨氏双缝干涉实验
- DOI:
- 发表时间:2003
- 期刊:
- 影响因子:0
- 作者:K.Furuya;et al.
- 通讯作者:et al.
Research perspective and problems of quantum-effect devices(invited talk)
量子效应器件的研究视角与问题(特邀报告)
- DOI:
- 发表时间:2005
- 期刊:
- 影响因子:0
- 作者:K.Furuya
- 通讯作者:K.Furuya
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FURUYA Kazuhito其他文献
FURUYA Kazuhito的其他文献
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{{ truncateString('FURUYA Kazuhito', 18)}}的其他基金
Quantum Interference Devices Controlled by Metals Buried in Semiconductors
由埋在半导体中的金属控制的量子干涉装置
- 批准号:
11694136 - 财政年份:1999
- 资助金额:
$ 8.83万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Study of Direct Observation of Electron Wave Phenomena in Solid State by Scanning Hot Electron Microscopy
扫描热电子显微镜直接观察固态电子波现象的研究
- 批准号:
11355013 - 财政年份:1999
- 资助金额:
$ 8.83万 - 项目类别:
Grant-in-Aid for Scientific Research (A).
Electron Wave Interference in Semiconductor Biprism of Tungsten Wire for Lateral Coherence Estimation
钨丝半导体双棱镜中的电子波干扰用于横向相干性估计
- 批准号:
10305024 - 财政年份:1998
- 资助金额:
$ 8.83万 - 项目类别:
Grant-in-Aid for Scientific Research (A).
New STM technique for observation of ballistic electrons in semiconductors
用于观察半导体中弹道电子的新型 STM 技术
- 批准号:
08405023 - 财政年份:1996
- 资助金额:
$ 8.83万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Basic study of coherent hot electron generation and its application for ultrafast devices
相干热电子产生基础研究及其在超快器件中的应用
- 批准号:
05402040 - 财政年份:1993
- 资助金额:
$ 8.83万 - 项目类别:
Grant-in-Aid for General Scientific Research (A)
Basic research on semiconductor materials and devices
半导体材料与器件基础研究
- 批准号:
04045023 - 财政年份:1992
- 资助金额:
$ 8.83万 - 项目类别:
Grant-in-Aid for international Scientific Research
Basic Study of Ultra-High Speed Electron wave Device Using Hot-Electron Transport in Lateral Superlattice
利用横向超晶格热电子输运的超高速电子波器件的基础研究
- 批准号:
01420025 - 财政年份:1989
- 资助金额:
$ 8.83万 - 项目类别:
Grant-in-Aid for General Scientific Research (A)
Study on Fabrication Technology of GaInAs/InP Device with Ultrafine Structure
超精细结构GaInAs/InP器件制备技术研究
- 批准号:
63850077 - 财政年份:1988
- 资助金额:
$ 8.83万 - 项目类别:
Grant-in-Aid for Developmental Scientific Research
Basic Research of GaInAs Ultrafast Transistor Using Diffraction of Ballistic Electron
利用弹道电子衍射的GaInAs超快晶体管的基础研究
- 批准号:
62460133 - 财政年份:1987
- 资助金额:
$ 8.83万 - 项目类别:
Grant-in-Aid for General Scientific Research (B)
"Basic study on very-fast GaInAs transistor and integrated long-wavelength laser"
《极快GaInAs晶体管和集成长波长激光器的基础研究》
- 批准号:
60550274 - 财政年份:1985
- 资助金额:
$ 8.83万 - 项目类别:
Grant-in-Aid for General Scientific Research (C)
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