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Basic study of coherent hot electron generation and its application for ultrafast devices

相干热电子产生基础研究及其在超快器件中的应用

基本信息

批准号：
05402040
负责人：
FURUYA Kazuhito
金额：
$ 8.83万
依托单位：
Tokyo Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (A)
财政年份：
1993
资助国家：
日本
起止时间：
1993 至 1994
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-05402040/
关键词：
Hot electron Electron coherence Electron wave diffraction Quantum size structure GaInAs InP OMVPE Electron beam mark detection Electron wave grating Resonant tunneling diode InP有機金属気相成長法 OMVPE成長法 InPヘテロ構造バリスティック伝導位相コヒーレント伝導電

项目摘要

In this research, the generation and the measurement of the coherent hot electron, the possibility of transport control of the hot electron based on the wave principle and the realization of the nanometer-pitch electron-wave grating were studied.The realization possibility of the electron wave device depend on the coherence of the electron. The coherent length of the quasi-equilibrium electron in the modulation doped structure has been estimated to be quite long at very low temperature and under very low applied voltage. On the other hand, the phase of the non-equilibrium electron or the hot electron is broken by the spontaneous emission of the L0-phonon and its phase braking time is supposed to be as short as 0.2ps. However, for operation at temperature higher than 4K and under appropriate voltage application, it is interesting to consider how to use the hot electron for the electron wave device.We are estimating the coherent properties of the hot electron using the double barrier res … More onant tunneling diode(RTD). When the phase of the electron is broken in the well of the RTD,the width of the resonant level increases. Then by measuring the width of the resonant level of the RTD,we can estimate the phase braking time or the coherent properties of the hot electron in the well. Therefore we have fabricated GaInAs/InP double barrier RTDs by OMVPE.From the second derivatives of the I-V curves, we have measured widths of resonant levels of RTDs. We compared the dependence of the level width on the barrier thickness with theory to estimate the coherent length. The apparent coherent length in GaInAs was 80-120nm at 4K when the energy of the electron was 100meV.Projecting to control the transport of the hot electron by electron wave diffraction in a quantum grating, we are developing nanofabrication technology of ultrafine pitch grating. We have achieved 40nm-pitch InP gratings embedded in GaInAs by combining electron-beam lithography, special wet chemical etching and organometallic vapor phase epitaxy overgrowth. Furthermore, to observe the ultrafine diffraction pattern of the electron wave, we have fabricated 40nm-pitch arrays of ultrafine electrodes by the lift-off technique. To align the embedded grating and the ultrafine electrode, we have developed the electron-beam alignment technique by using Platinum marks. Less

研究了相干热电子的产生和测量、基于波动原理的热电子输运控制的可能性以及纳米间距电子波光栅的实现。电子波器件实现的可能性取决于电子的相干性。估计在极低温度和极低电压下，调制掺杂结构中的准平衡电子的相干长度相当长。另一方面，非平衡电子或热电子的相位被l0声子的自发发射破缺，其相位制动时间应短至0.2ps。然而，对于在高于4K的温度和适当的电压应用下工作，考虑如何将热电子用于电子波器件是很有趣的。我们利用双势垒分辨率对热电子的相干特性进行了估计。当电子的相位在RTD的阱中被破缺时，谐振能级的宽度增加。然后，通过测量RTD谐振能级的宽度，我们可以估计出井中热电子的相位制动时间或相干性质。因此，我们利用OMVPE制备了GaInAs/InP双势垒rtd。从I-V曲线的二阶导数，我们测量了rtd的谐振电平宽度。我们比较了能级宽度对势垒厚度的依赖关系和理论来估计相干长度。当电子能量为100meV时，GaInAs在4K下的表观相干长度为80 ~ 120nm。为了利用电子波衍射控制量子光栅中热电子的输运，我们正在开发超细间距光栅的纳米加工技术。我们通过结合电子束光刻、特殊湿法化学蚀刻和有机金属气相外延过度生长，实现了嵌入GaInAs中的40nm间距InP光栅。此外，为了观察电子波的超细衍射图，我们采用起飞技术制作了40nm间距的超细电极阵列。为了使嵌入式光栅与超细电极对准，我们开发了利用铂标记的电子束对准技术。少