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Electron Wave Interference in Semiconductor Biprism of Tungsten Wire for Lateral Coherence Estimation

钨丝半导体双棱镜中的电子波干扰用于横向相干性估计

基本信息

批准号：
10305024
负责人：
FURUYA Kazuhito
金额：
$ 16.58万
依托单位：
TOKYO INSTITUTE OF TECHNOLOGY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A).
财政年份：
1998
资助国家：
日本
起止时间：
1998 至 2000
项目状态：
已结题

项目摘要

To estimate the lateral coherence of the electron wave, we have studied the semiconductor biprism device. The device consists of a metal wire embedded in the semiconductor and positive-biased. The electron wave propagating normally the wire is deflected by the attractive field around the wire to form the interference fringe. Towards the device, the following achievements have been obtained. (1) The electron wave propagation was simulated to reveal conditions for high contrast of the interference pattern. The coherent hot electron emitter was proposed where the Fermi energy could be adjusted within O.3meV.This emitter generates the electron wave with the wave front spread more than 100nm, that is, high lateral coherence. (2) Stencil lift-off was proposed as a new lithography process for the metal of high melting point to form tungsten wires as narrow as 20nm, the smallest in the world. (3) Conditions are studied experimentally to successfully embed the tungsten wire of 25nm width in GaInAs or GaAs with OMVPE with flat top surface. (4) GaAs/tungsten interface was characterized to achieve excellent Schottky contact by optimizing of surface treatments. (5) GaAs devices with embedded tungsten wires and double-barrier resonant-tunneling-emitters were fabricated. Their current-voltage characteristics were measured to indicate the formation of the attractive potential field around the wire. (6) Ultra-fine array electrodes of 80nm-pitch were fabricated for the observation of the interference pattern.Summarizing above, we have made it possible to generate the electron wave with enough high lateral coherence, achieved experimentally to form the attractive potential distribution around the metal wire in the semiconductor. By combining all, we will be able to estimate the lateral coherence of the electron wave.

为了估计电子波的横向相干性，我们研究了半导体双棱镜器件。该器件由一根嵌在半导体中的正偏置金属线组成。沿导线正常传播的电子波在导线周围的引力场的作用下发生偏转，形成干涉条纹。针对该装置，取得了以下成果。(1)对电子波的传播进行了数值模拟，揭示了高对比度干涉条纹的条件。提出了在0.3 meV范围内可调节费米能量的相干热电子发射体，该发射体产生波前展宽大于100 nm的电子波，即具有较高的横向相干性。(2)模版剥离是一种新的光刻工艺，可以将高熔点的金属制成世界上最小的20 nm钨丝。(3)实验研究了在具有平顶表面的OMVPE衬底上成功地将宽度为25 nm的钨丝埋入GaInAs或GaAs中的条件。(4)通过表面处理工艺的优化，实现了良好的肖特基接触。(5)制作了埋入钨丝和双势垒共振隧穿发射的砷化镓器件。测量了它们的电流-电压特性，以表明导线周围形成了吸引电位场。(6)制作了间距为80 nm的超细阵列电极用于干涉图样的观察。综上所述，我们已经能够产生足够高的横向相干性的电子波，并在实验上实现了在半导体中金属丝周围形成吸引人的电势分布。把这一切结合起来，我们就能估算出电子波的横向相干性。