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Basic Study of Ultra-High Speed Electron wave Device Using Hot-Electron Transport in Lateral Superlattice

利用横向超晶格热电子输运的超高速电子波器件的基础研究

基本信息

批准号：
01420025
负责人：
FURUYA Kazuhito
金额：
$ 7.3万
依托单位：
Tokyo Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (A)
财政年份：
1989
资助国家：
日本
起止时间：
1989 至 1990
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-01420025/
关键词：
Electron wave phenomenon Lateral superlattice Electron beam lithography Buried growth GaInAs InP OMVPE Hot electron Organo-metallic vapor phase epitaxy 極微細構造電子波横超格子電子波回析 OMVPE選択成長 OMVPE埋め込み成長

项目摘要

We have studied wave property of the hot electron in the lateral superlattice theoretically and experimentally to explore the ultra-high speed electron wave device. The following results were obtained.1) We have investigated about necessary conditions for the observation of the electron wave diffraction phenomenon due to the lateral superlattice. We can avoid the phase randomization of the electron wave, when the wavelength of the hot electron is less than 20nm, the propagation time is less than 0.1ps, the impurity concentration is less than 10^<15>cm^<-3>, and the temperature is below 77K in InGaAs.2) We have achieved fabrication of the InGaAs/InP lateral superlattice with 70nm-period using the combined technique of the electron beam lithography, the wet chemical etching and OMVPE buried growth. Furthermore, we have examined the regrown interface to reveal the electron accumulation. We have found that this accumulation is reduced by factor more than 10 by the surface treatment with sulfuric ammonium and preheating. We have made it possible to fabricate the lateral superlattice with excellent electric interface properties.3) We have fabricated the InGaAs/InP hot electron transistor with very high transport efficiency (99.7% across 40nm base, corresponding to the current gain of 400) by the improvement of growth conditions of OMVPE. We have proposed a method for the estimation of the relaxation time. By using this method, the phase relaxation time of the hot electron in InGaAs was estimated as in the order of 0.1ps at 77K.

我们从理论上和实验上研究了横向超晶格中热电子的波动特性，探索超高速电子波器件。得到了以下结果：1)我们研究了观察横向超晶格电子波衍射现象的必要条件。在InGaAs中，当热电子波长小于20nm、传播时间小于0.1ps、杂质浓度小于10^<15>cm^<-3>、温度低于77K时，可以避免电子波的相位随机化。2）利用电子结合技术，实现了周期为70nm的InGaAs/InP横向超晶格的制备。束光刻、湿法化学蚀刻和OMVPE掩埋生长。此外，我们还检查了再生界面以揭示电子积累。我们发现，通过硫酸铵表面处理和预热，这种积累可减少 10 倍以上。我们使得制备具有优异电界面性能的横向超晶格成为可能。3）通过改进OMVPE的生长条件，我们制备了具有非常高传输效率的InGaAs/InP热电子晶体管（在40nm基极上为99.7％，对应于400的电流增益）。我们提出了一种估计弛豫时间的方法。通过使用这种方法，InGaAs 中热电子的相弛豫时间在 77K 时估计为 0.1ps 数量级。