Quantum Interference Devices Controlled by Metals Buried in Semiconductors

埋金属控制电子波双棱镜的分析本文对日本和瑞典合作提出的电子波双棱镜进行了分析。特别地，我们从理论上研究了电子源的相干性对干涉图样对比度的影响，并且已经揭示出，要实现双棱镜的干涉，需要一个高度相干的电子源发射具有亚meV的横向能量扩展的电子束。为了实现这种高度相干的电子束，相干发射器，其中量子阱的谐振能级和源的费米能级之间的能量差已经被背栅精确地控制，提出并从理论上证明了它的工作原理.形成周期为几十nm的周期性精细电极隔离技术的改进周期为几十nm的周期性精细电极，已经表明， 关于我们 在小干扰电流测量中，提出了一种新颖的晶体管，它采用双势垒谐振--隧穿结构和金属线，并且我们已经试图通过我们提出的晶体管证明在双棱镜的操作中所需的吸引力的电势形成。在研究了共振隧穿结构晶体生长和半导体埋层技术的基础上，我们利用OMVPE技术，通过再生长将钨埋在GaAs中，制备了器件。通过对测量数据的分析，首次证明了在埋置金属妻子周围存在吸引势。此外，为了降低发射极-栅极漏电流，我们在InP半绝缘衬底上制作了晶体管，并通过独立导线布线。从测量的I-V特性，它已被证明，掩埋金属线栅已能够产生吸引的电位和泄漏电流已被减少，通过检查在负微分电阻的峰值电流的值。因此，我们能够展示我们设备的潜力。少

Analysis of Electron Wave Biprism Controlled by Buried MetalAnalysis of electron wave biprism proposed by a collaboration between Japan and Sweden has been proceeded. Especially, we have theoretically examined influences of coherence of electron source on contrast of interference pattern and it has been revealed that a highly coherent source emitting electron beam with a transverse energy spread of sub meV has been required to realize interference by the biprism. To realize such highly coherent electron beam, a coherent emitter, where a energy difference between a resonant level of a quantum well and a Fermi level of a source has been precisely controlled by a back gate, has been proposed and theoretically proved its operation principle.Improvement of Isolation Technique on Formation of Periodic Fine Electrodes with Period of a Few Tens nmFor observations of electron wave phenomenon in the biprism by periodic fine electrodes with period of a few tens nm, it has been shown that isolatio … More n between electrode has been very important on small interference current measurement, and the required isolation has been achieved by conduction band discontinuity of heterojunction and dry etching.Demonstration of Attractive Potential Formation by Buried Metal Hot Electron Transistor with Metal Wire GateWe have proposed a novel transistor where hot electrons are generated and travel through undoped semiconductor region by adopting a combination of double-barrier resonant-tunneling structure and metal wire, and we has attempted to demonstrate attractive potential formation required in operation of the biprism by our proposed transistor. After fundamental studies of crystal growth for resonant-tunneling structure and burying metal in semiconductors, we have fabricated the device by re-growth to bury Tungsten in GaAs using OMVPE. By analysis of measured data, for the first time, a formation of attractive potential around the buried metal wife has been demonstrated. Furthermore, to reduce emitter-gate leakage current, we have fabricated transistors on InP semi-insulating substrate and wired by free-standing wire. From measured I-V characteristics, it has been shown that buried metal wire gate has enabled to produce attractive potential and leakage current has been reduced by examining value of peak current at negative differential resistance. Therefore,we have been able to show the potential of our device. Less