Property Control of the Multicomponent Oxide Transparent Conducting Thin Films

用不同的二元和三元化合物组合而成的新型多元氧化物，用R.F.或者华盛顿。磁控溅射。在这些多元氧化物中制备了在整个成分范围内透明导电的薄膜，包括Zn_2In_2O_5-In_4SnO_3O_(12&gt)和ZnSnO_3-In_4Sn3O_(12)。研究了这些多元薄膜的电学、光学、结晶学和化学性质。可以通过改变靶材中的成分来控制所得到的多组分薄膜的电学和化学性质。所得多组分薄膜的电阻率、带隙能、功函数和刻蚀速率介于两种三元化合物薄膜的性质之间。作为我们先前工作的扩展，我们建议使用杂质共掺杂的氧化物作为透明导电膜。例如，用传统的直流方法制备了锌含量为0~341at%的高透明导电共掺ITO(ITO：Zn)薄膜。磁控溅射。在最佳工艺条件下制备的锌含量为0-28Ar%的ITO：Zn薄膜的电阻率为2-3×10~(-4)Ωcm。ITO：锌薄膜在盐酸溶液中的刻蚀速率可以由薄膜中的锌含量来控制，在1.0M的盐酸溶液中可以很容易地刻蚀出锌含量为7.6-34.1 at%的ITO：Zn薄膜。

Transparent and conductive thin films using new multicomponent oxides consisting of a combination of different binary and ternary compounds have been prepared by r.f. or d.c. magnetron sputtering. Transparent and conductive Zn_2In_2O_5-ZnSnO_3, Zn_2In_2O_5-In_4Sn_3O_<12> and ZnSnO_3-In_4Sn_3O_<12> thin films were prepared over the whole range of compositions in these multicomponent oxides. The electrical, optical, crystaloographcal and chemical properties of these multicomponent thin films were investigated. It was achieved that the electrical and chemical properties of the resulting multicomponent thin films could be controlled by varying the composition in the target. The resistivity, band-gap energy, work function and etching rate of the resulting multicomponent thin films ranged between the properties of the two ternary compound films. As an extension of our previous work, we propose the use of impurity-co-doped oxides for transparent conducting films. For example, Highly transparent and conductive Zn-co-doped ITO (ITO : Zn) thin films were prepared with a Zn content of 0 to 34.1 at% by conventional d.c. magnetron sputtering. A resistivity of 2-3X10^<-4> Ωcm was obtained in ITO : Zn films prepared under optimized conditions with a Zn content of 0-28ar%. The etching rate of ITO : Zn films in a HCl solution could be controlled by the Zn content in the films ; ITO : Zn films prepared with a Zn content of 7.6-34.1 at% wer easily etched in a 1.0 M HCl solution.