STATIC INDUCTION TRANSISTORS USING ORGANIC MATERIALS

提出了一种用于显示器件的有机静电感应晶体管（SIT），并研究了其基本电学特性。使用铜酞菁（CuPc）蒸镀膜作为有源层的有机SIT具有Au（漏极）/CuPc/Al（栅极）/CuPc/Au（源极）/玻璃的层状结构。电特性表明，从源极到漏极的电流由相对低的栅极电压控制。此外，通过应用掩埋的Al栅电极作为肖特基栅极，实现了诸如高电流密度和高速操作的优良特性。从有机电致发光器件的驱动系统出发，研究了有机静电感应晶体管（SIT）与电致发光器件相结合的基本特性。该器件结构具有ITO（源极）/Alq 3（发射层）/α-NPD（空穴传输层：插入Al栅电极）/Al（漏极），其结构几乎与典型的EL器件相同。电流-电压特性和发光特性表明，该混合型有机电致发光晶体管可作为显示器件使用。

Organic static induction transistors (SITs) for display devices are proposed and the basic electrical characteristics of the SITs are investigated. The organic SITs using a copper phthalocyanine (CuPc) evaporated film as an active layer have a layered structure of Au (drain)/CuPc/Al (gate)/CuPc/Au (source)/glass. The electrical characteristics show that the current flow from the source to drain electrodes is controlled by relatively low gate voltages. Furthermore, excellent characteristics such as a high current density and high speed operation are realized by applying a buried Al grid electrode as the Schottky gate. Considering the driving system of organic electroluminescence (EL) devices, basic characteristics of EL device combined with organic static induction transistor (SIT) are examined. This device structure has ITO (source)/Alq3 (emissive layer)/α-NPD (hole-transfer layer : Al gate electrode inserted)/Al (drain), structure which is almost same as a typical EL device. Current-voltage and luminescent characteristics demonstrate that the hybrid organic electroluminescence transistor works as a display device.