Investigation of YSZ insulator fims with high dielectric constant prepared by limited reaction sputtering technique

本文提出并研究了一种新的溅射成膜方法--限制反应溅射法。利用这种技术，YSZ和ZrO_2介电薄膜的尺寸可用于下一代MOSFET的栅极材料。抑制了Si衬底表面氧化，从而获得了高达20以上的高比介电常数。在传统的溅射工艺中，氧化物靶容易产生氧离子和自由基，从而使Si被严重氧化。但是，这种技术并没有使它们产生，导致Si衬底和沉积膜之间的界面清晰。

A new sputtering film deposition method, named Limtted Reaction Sputtering Technique, was developed and investigated. Using this technique, YSZ and ZrO2 dielectric films were synthsized for gate materials of next generation MOSFETs. The Si substrate surface oxidation was suppressed consequently a high specific dielectric constant as high as over 20 was obtained. On conventional sputtering technique using oxide target, oxigen ions and radicals are easily to be generated, thus Si is oxidized significantly. However, this teconique does not genarate them, resulting in clear interface between Si substrate and deposited films.