Study of co-doping of Ag and In in ZnS:N/GaAs layers prepared by vapor phase epitaxy

研究了In和AgNO 3共掺杂的ZnS：N/GaAs气相外延层。室温下的霍尔效应测量显示，ZnS：N、Agriculture、In层的自由空穴浓度和迁移率值分别为（0.6-1.4）x10^<19>cm^2<-3>和10-25 cm ^2/Vs。这些层的自由空穴浓度几乎与温度无关，表明杂质带的形成。根据迁移率值和空穴浓度的温度依赖性估计电活性受体、供体和中性杂质的浓度。“蓝色农业发射”的出现和低电阻p型导电仅对于ZnS：N。农业，In层是相容的。研究了NH_3流量对荧光光谱的影响。

Vapor-phase epitaxial ZnS:N/GaAs layers co-doped with In and Agriculture were investigated. Hall-effect measurements at room temperature revealed free hole concentrations and mobility values to be (0.6-1.4)x10^<19> cm^<-3> and 10-25 cm^2/Vs for ZnS:N, Agriculture, In layers, respectively. Almost temperature independent free hole concentrations of these layers indicate formation of impurity band. Concentrations of electrically active acceptor, donor, and neutral impurities were estimated from the temperature dependences of mobility values and hole concentrations. Appearance of the "Blue-Agriculture emission" and low resistive p-type conduction were compatible only for ZnS:N.Agriculture, In layers. Moreover, the photoluminescence spectra, which were influenced by the amount of NH_3 flow, were studied.