Fabrication of Semiconductor Light Amplifier using Ultra-High Co-Doping of Er and O

1.在GaInP/（GaAs：Er，O）/GaInP的器件结构中，发现形成了无意的界面层，该层发射不必要的光。发现该层影响生长在界面层顶部的层的晶体质量。通过X射线ORT散射分析发现，由于In在GaInP层上生长的GaAs层中的分布，这种无意的界面层被发现.采用相对较低的生长温度（540℃）抑制了非故意界面层的生长，该温度是Er-20中心有效发光的最佳生长温度.在上述生长条件下制备的p-n结器件成功地获得了1.55μm的发射。这种从p-n结的发射是世界上第一次观察到的。根据发射的脉冲响应，获得该发射的激发截面为2x 10 - <-15>4cm-3<-2>。该值比Si.6大两个数量级。发现横截面依赖于有源层厚度，越厚越小.发现这种异常的依赖性是由于注入的电子和空穴的扩散长度非常短。

1. In the device structure of GaInP/(GaAs:Er,O)/GaInP it was found that unintentional interface layer is formed and this layer emits unnecessary light. This layer was found to affect the crystal quality of the layers grown on top of the interface layer.2. This unintentional interface layer was found by the X-ray ORT scattering analysis due to the distribution of In into the GaAs layer grown on top of the GaInP layer.3. The unintentional interface layer was suppressed to grow by using a relatively lower temperature (540℃) that is the best growth temperature for the effective light emission from the Er-20 center.4. We successfully obtained the 1.55μm emission from the p-n junction devices fabricated using the above growth conditions. This emission from the p-n junction is the first observation in the world.5. From the pulse response of the emission, the excitation cross-section for this emission was obtained as 2x10^<-15>cm^<-2>. This value is by two orders of magnitude larger than that in Si.6. The cross-section was found dependent on the active layer thickness the thicker the smaller.7. This abnormal dependence was found due to the very short diffusion lengths of the injected electrons and holes.