Fabrication of Semiconductor Light Amplifier using Ultra-High Co-Doping of Er and O

1. 在GaInP/(GaAs:Er，O)/GaInP器件结构中发现了无意形成的界面层，该层发出不必要的光。发现该层会影响生长在界面层顶部的层的晶体质量。由于In分布在生长在GaInP层顶部的GaAs层中，通过x射线ORT散射分析发现了这一无意界面层。采用较低的温度（540℃）抑制了无意界面层的生长，这是Er-20中心有效发光的最佳生长温度。我们成功地从上述生长条件下制备的p-n结器件中获得了1.55μm的发射。这种p-n结的发射是世界上第一次观察到的。根据发射的脉冲响应，得到该发射的激发截面为2x10^<-15>cm^<-2>。这个值比Si.6中的值大两个数量级。横截面与活性层厚度有关，越厚越小。这种不正常的依赖是由于注入的电子和空穴的扩散长度很短。

1. In the device structure of GaInP/(GaAs:Er,O)/GaInP it was found that unintentional interface layer is formed and this layer emits unnecessary light. This layer was found to affect the crystal quality of the layers grown on top of the interface layer.2. This unintentional interface layer was found by the X-ray ORT scattering analysis due to the distribution of In into the GaAs layer grown on top of the GaInP layer.3. The unintentional interface layer was suppressed to grow by using a relatively lower temperature (540℃) that is the best growth temperature for the effective light emission from the Er-20 center.4. We successfully obtained the 1.55μm emission from the p-n junction devices fabricated using the above growth conditions. This emission from the p-n junction is the first observation in the world.5. From the pulse response of the emission, the excitation cross-section for this emission was obtained as 2x10^<-15>cm^<-2>. This value is by two orders of magnitude larger than that in Si.6. The cross-section was found dependent on the active layer thickness the thicker the smaller.7. This abnormal dependence was found due to the very short diffusion lengths of the injected electrons and holes.