Research on a method of temperature measurement for a silicon semiconductor wafer

在2001年至2002年这两年中取得了以下成果：(1)研制了硅片室温附近和1000 K以上高温下发射率测量的实验装置。利用这些仪器，可以测量光谱、定向和偏振发射率。(2)通过对市售薄膜测量设备的改造，研制了400 ~ 1100nm波长范围内高温（~ 1100k）下硅晶片光学常数和薄厚度的测量装置。(3)提出了利用接触式和非接触式两种技术优点对被测物体进行测量的混合式表面温度计的概念。这个想法很有希望监测硅片的表面温度，在热电偶上焊接非常困难。这种实际使用的混合表面温度计目前正在开发中。(4)完成了硅片的发射率建模。利用该模型，可以模拟多种条件下的发射率行为。通过仿真得到了发射率不变的条件。在某些条件下，硅晶片的发射率与氧化膜厚度的变化无关。这一发现需要实验证实。部分研究成果已发表在《应用光学》和《Trans》等期刊上。SICE的申请并成功通过。在国内外研讨会和会议上发表论文16篇。混合表面温度计和发射率不变条件很快就会申请专利，因为它们是原创的和有用的。

Following results have been achieved during the past two years from 2001 to 2002.(1) Experimental apparatuses for emissivity measurements of silicon wafers near room temperature and at high temperature over 1000 K have been developed. Using these apparatuses, spectral, directional and polarized emissivities can be measured.(2) By revamping a commercially available equipment for thin film measurement, a measurement apparatus for optical constants and thin thickness of a silicon wafer at high temperature (〜1100 K) and at wavelength from 400 to 1100 nm has been developed.(3) The conception of a hybrid type surface thermometer that utilizes both advantages of contact and non-contact techniques to a measured object has been obtained .this idea is promising for monitoring the surface temperature of a silicon wafer, welding on a thermocouple on which is very difficult. This hybrid surface thermometer for practical use is now under development.(4) Emissivity modeling for silicon wafer has completed. Using this modeling, emissivity behaviors under a lot of conditions can be simulated. The emissivity-invariant condition has been found through the simulation. Emissivity of a silicon wafer is unchanged under some conditions irrespective of changes of oxide film thickness. Experimental confirmation is necessary for this finding.Part of these results have been submitted to journals such as Applied Optics and Trans. of SICE and successfully accepted. 16 papers have been published at international and domestic workshops and conferences.The hybrid surface thermometer and the emissivity-invariant condition are soon intended to apply for patents because these are original and useful.