Fabrication of porous oxide films with three dimensional ordered periodicity on semiconductors and metals bawd on colloidal crystal templating and its applications

基于局部阳极氧化的Si和随后的SiO2的化学蚀刻的纳米图案化工艺被开发用于使用自组织阳极多孔氧化铝作为掩模在Si表面上制造点阵列和孔阵列。我们还制作了微/纳米结构的硅表面的胶体晶体模板，疏水处理和随后的金属辅助化学蚀刻的组合。所提出的Si表面的图案化工艺由于其相对简单和低成本而在需要受控的纳米级周期性和形态的纹理化表面的领域中具有潜在的技术应用。此外，电化学腐蚀铝箔使用蜂窝状氧化物掩模进行了研究，直接控制坑的起始位置独立的基板的表面活化状态。中性电解液中的局部阳极氧化可以实现自组装胶体球的六方有序图案向氧化膜的转移。也就是说，仅在铝表面上形成的蜂窝状氧化物掩模的间隙中产生蚀刻坑。与传统方法相比，该方法明显改善了点蚀起始点的定位。

Nanopatterning processes based on a localized anodization of Si and the subsequent chemical etching of SiO2 were developed to fabricate a dot array and a hole array on a Si surface using self-organized anodic porous alumina as a mask. We have also fabricated micro/nano structured Si surfaces by a combination of colloidal crystal templating, hydrophobic treatment and subsequent metal-assisted chemical etching. The proposed patterning processes of the Si surface have potential technological applications in fields that need textured surfaces of controlled nanoscale periodicity and morphology owing to their relative simplicity and low cost. In addition, the electrochemical etching of aluminum foils using a honeycomb oxide mask was studied to directly control the initiation sites of pits independent of the surface activation state of the substrate. The transfer of the hexagonally ordered pattern of self-assembled colloidal spheres to the oxide film could be achieved by the localized anodization in neutral electrolyte. That is, etch pits were generated only in the intersp aces of honeycomb oxide mask formed on the aluminum surface. Based on this process, the dispersibility of the initiation sites of pits was improved clearly in comparison with that for the conventional method.