Silicon-Carbide Switches for Post-Silicon Efficiency of Power Electronics

该项目的目的是创造一个基于碳化硅（SiC）的电力电子开关的原型，以提高能源效率并减小电力电子电路的尺寸，远远超出硅技术的理论极限。直到最近，电子产品中占主导地位的控制开关还只能用硅晶体管来实现。一种新的SiC表面电子钝化方法使SiC晶体管的商业化成为可能。新的器件结构和新的制作工艺有望充分发挥碳化硅的材料优势。

The aim of this project is to create a prototype of a silicon carbide (SiC)-based power-electronic switch for improved energy efficiency and reduced size of power-electronic circuits, well beyond the theoretical limits of silicon technology. Until very recently, the dominant controlled switch in electronics could only be implemented as a silicon transistor. A new method of electronic passivation of SiC surfaces has enabled the recent commercialisation of SiC transistors. It is expected that the material advantages of SiC can be fully exploited by a new device structure and a new fabrication process.