In-situ radiation thermometry of semiconductor materials and its calibration system

成功地发展了两种辐射测温方法，即利用偏振辐射比同时测量发射率和温度的方法和基于发射率不变条件的辐射测温方法。这些方法适用于不同的电阻率(0.01~2000 cm)、宽谱(0.9~4.5微米)和温度范围(900K以上)。此外，基于吸收边波长漂移和透过率变化法的两种非接触式温度测量方法已被证实在900K下对半透明硅片有很好的应用前景。一种用于校准的混合式表面温度传感器由于引入了化学腐蚀的薄膜(Hastelloy金属)而得到了极大的改进。通过结合这些结果，将开发出一种温度测量系统，以最终降低硅片实际制造过程中的背景辐射噪声。

Two radiation thermometry, namely, the simultaneous measurement of emissivity and temperature by use of the ratio of polarized radiances and the method due to an emissivity-invariant condition have successfully been developed. These methods are available irrespective of different resistivity from 0.01 to 2000cm, wide spectra from 0.9 to 4.5 micrometers and temperature range over 900 K. Moreover, the two non-contact temperature measurement methods using an absorption edge wavelength shift and a transmittance variation method have been confirmed to be promising for semitransparent silicon wafers under 900 K. A hybrid surface temperature sensor for calibration has been greatly improved with the introduction of a thin film (Hastelloy metal) that is chemically etched. By combining these results, a temperature measurement system for finally mitigating background radiation noise at a real manufacturing process of silicon wafers will be developed.