Mesoplasma lateral epitaxy for next generation giant electronics

高速率低温外延的介观等离子体环境具有低电子温度和高离子密度的特点。原子氢也以高浓度在空间上均匀分布。纳米团簇，生长前体的介等离子体外延，不受氢分压的变化。这些使我们能够存款高质量的外延膜，而无需在沉积前对衬底进行特殊的预处理，这表明其对于大面积外延沉积的有利特性。

Mesoplasma environment for high rate and low temperature epitaxy was revealed to possess low electron temperature and high ion density characteristics. Atomic hydrogen is also distributed at high concentration uniformly spatially. Nanoclusters, growth precursors for mesoplasma epitaxy, are not affected by a change in the hydrogen partial pressure. These enable us to deposit high quality epitaxial films with no special pre-treatment for substrate prior to deposition, suggesting its advantageous characteristics for large area epitaxial deposition.