Atomic-scale structural fluctuation and dynamics of photo-induced phase transition

通过光学掺杂调节一维表面态的能带填充，实现了In/Si(111)纳米线中金属绝缘体转变(MIT)的可逆控制。MIT的控制是通过根据界面处引入的载流子密度来调节半填充位置附近表面态的费米能级来实现的。我们通过调节光激发强度和电场强度，通过电荷掺杂成功地实现了MIT的可逆和主动控制。利用飞秒时间分辨扫描隧道显微镜对其动力学行为进行了研究。这种方法广泛适用于其他低维系统，使MIT更具可控性，适合在未来的纳米级功能器件架构和纳米级器件间布线中作为无源元件使用。

The reversible control of metal insulator transition(MIT) in In/Si(111) nanowires is demonstrated by tuning the band filling of the one-dimensional surface state by optical doping. The control of MIT is carried out by regulating the Fermi level in the surface state around the half-filled position, depending on the carrier density introduced at the interface. We successfully achieved the reversible and active control of MIT via the charge doping by regulating the intensity of photoexcitation and electrical field. The dynamical behavior is investigated by femtosecond time-resolved STM. This method is widely applicable to other low-dimensional systems and makes MIT more controllable and suitable for use in nanowires as anactive element in future architectures of nanosized functional devices as well as nanoscale interdevice wiring.