Characterization of crystal defects in organic semiconductors for progress in device performance

研究了有机半导体薄膜结构和器件性能的表征，以控制晶体生长和阐明有机薄膜晶体管中晶体缺陷与输运性能的关系。成功地获得了气相沉积并戊烯薄膜和溶液生长tips -戊烷薄膜的二维掠入射x射线衍射（2D-GIXD）。对于并五苯的薄膜生长，在实时观察中可以清楚地观察到厚度相关的结构变化，并且结构变化受空气暴露的影响显著。另一方面，在强磁场作用下，从溶液中生长出了tips -戊烷的大单晶。仔细分析了溶液生长tips -戊烷的2D-GIXD模式，并测量和讨论了基于薄膜晶体管的空穴迁移率。

The characterization of structures and device properties was studied on organic semiconducting thin films for the purpose of controlling the crystal growth and of elucidating the relationship between crystal defects and transport properties in organic thin-film transistors. Two-dimensional grazing incidence X-ray diffraction (2D-GIXD) was successfully obtained for the vapor deposited pentacene thin-films and the solution-grown TIPS-pentane films. As to the thin film growth of pentacene, thickness-dependent structural change was clearly observed in a real-time observation, and the structural change is significantly affected by exposing to air. On the other hand, large single crystals of TIPS-pentane were grown from solution phase under high magnetic filed. The 2D-GIXD patterns of solution-grown TIPS-pentane were prudently analyzed, and hole mobility in a thin film transistor based was measured and discussed.