Epitaxial Growth and Electrical Property of Compositionally-modulated Boride Thin Films

本研究利用激光分子束外延技术成功地制备了LaB6、BaB6、SrB6、CaB6、（La，Sr）B6和（Sr，Ca）B6系列六硼化物外延薄膜。这些硼化物薄膜在热电转换材料、高电流密度场发射平面源、高温电子器件等方面有着广泛的应用前景。通过各种薄膜处理技术如衬底表面工程学的应用，发展薄膜外延技术，我们可以获得与硼八面体簇结构晶体生长有关的新材料科学知识。

In this study, epitaxial thin film of various hexaboride series including LaB6, BaB6, SrB6, CaB6,(La, Sr) B6, and(Sr, Ca) B6 s were fabricated successfully by means of laser molecular beam epitaxy(laser MBE). These epitaxial boride thin films are expected wide applications such as thermoelectric conversion materials, a high current density field emission flat source, and high-temperature electronic devices. Through the various film processing such as substrate-surface engineering were applied for development of film epitaxy, we could obtain the knowledge on the new material science concerning with the crystal growth of boron-octahedron cluster structure.