STUDIES ON STEP BEHAVIOR ON Si(110)SURFACE AND ITS APPLICATION TO SELF-ORGANIZED FORMATION OF GRAPHENE NANO-RIBBON

我们详细研究了衬底表面微结构对其上形成的外延石墨烯（EG）的质量和电子结构的影响。因此，我们建立了一种控制Si和SiC衬底表面台阶的方法，成功地改善了EG质量，并控制了3C-SiC（111）表面的Si和c端。此外，还发现si端和c端SiC（111）表面上的EGs分别表现出半导体和金属性质。这一发现无疑为控制石墨烯的电子特性提供了一种新的方法，可以应用于石墨烯器件的制造。

We have studied in detail the impacts of surface microstructures of substrates on the quality and the electronic structure of the epitaxial graphene (EG)formed on them. As a result, we established a method to control the surface steps on Si and SiC substrates, and succeeded in the betterment of EG quality and in controlling the Si-and C-termination of 3C-SiC(111)surfaces. Moreover, it was found that EGs on Si-terminated and C-terminated SiC(111)surfaces show semiconducting and metallic properties, respectively. This finding surely provides a novel method to control the graphene electronic properties, which can be applied to fabrication of graphene devices.