Study of spin-transfer torque MRAM using thermal assistnce

在写入过程中，MRAM电池的热辅助被认为可以有效地降低自旋传递扭矩（STT）开关的临界电流密度。我们利用GdFeCo存储层制备了巨磁阻薄膜，并研究了其STT开关在热辅助MRAM中的应用。我们还利用tfe层制备了垂直磁化隧道结，该结具有较大的垂直各向异性和较低的居里温度。在这两个实验中，我们发现热辅助可以有效地降低STT开关的电流密度。

Heat-assistance of the MRAM cell during the writing is considered to be effective to reduce the critical current density for the spin transfer torque (STT) switching. We fabricated giant magneto-resistance films with GdFeCo memory layers and investigated their STT switching aiming for the application to the thermally assisted MRAM. We also fabricated perpendicularly magnetized tunnel junctions with TbFe layer which has a large perpendicular anisotropy and low curie temperature. In both experiments we found that heat assistance is effective to reduce the current density for the STT switching.