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Development of high sensitivity non-radiation defect characterization systems for diamond semiconductor

Development of high sensitivity non-radiation defect characterization systems for diamond semiconductor
金刚石半导体高灵敏度非辐射缺陷表征系统的开发
批准号:
22760300
负责人:
MAIDA Osamu
金额:
$2.58万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Young Scientists (B)
财政年份:
2010
资助国家:
日本
项目状态:
已结题
起止时间:
2010 至 2011

项目摘要

项目成果

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中文摘要
翻译
本工作的目的是开发一种用于宽间隙半导体材料,特别是金刚石晶体的非辐射缺陷表征系统。利用压电器件的高灵敏度信号探测器开发了变温(80~400K)光热光谱,并对高压/高温合成金刚石晶体和微波等离子体化学气相沉积法生长的自立同外延金刚石薄膜进行了缺陷表征。
英文摘要
The purpose of this work is to develop a non-radiative defect characterization system for wide-gap semiconductor materials, especially diamond crystal. I have developed a temperature-variable(80~400K) photothermal spectroscopy using a high-sensitive signal detector with a piezoelectric device, and carried out the defect characterization of a high-pressure/ high-temperature synthesized diamond crystal and a self-standing homoepitaxial diamond film grown by a micro-wave plasma chemical vapor deposition method.
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会议论文
Growth of phsphorus-doped homoepitaxial CVD diamond on vicinal (001) substrates
在邻位 (001) 基底上生长掺磷同质外延 CVD 金刚石
DOI: --
发表时间: 2011
期刊:
影响因子: --
作者: [Y.Ashizawa, S.Shinohara, T.Nawata, K.Nakagawa, H.Nishio]
通讯作者: H.Nishio
Improvement on p-type performance of CVD diamond by isolating thin heavily-boron-doped layer as innumerable islands
通过将薄重硼掺杂层隔离为无数岛来改善 CVD 金刚石的 p 型性能
DOI: --
发表时间: 2011
期刊:
影响因子: --
作者: [O. Maida, M. Aono, T. Ito]
通讯作者: T. Ito
Fabrication of self-standing device-quality single-crystalline diamond films on vicinal (001) surfaces and its application to the high-energy photon detectors
邻位(001)表面自支撑器件质量单晶金刚石薄膜的制备及其在高能光子探测器中的应用
DOI: --
发表时间: 2010
期刊:
影响因子: --
作者: [O. Maida, S. Iguchi, T. Igarashi, H. Sato, T. Ito]
通讯作者: T. Ito
Hall data analysis of heavily-boron-doped CVD diamond films based on a two-type carrier model and their application to improvement on p-type performance of CVD diamond
基于两型载流子模型的重硼掺杂CVD金刚石薄膜霍尔数据分析及其在改善CVD金刚石p型性能中的应用
DOI: --
发表时间: 2010
期刊:
影响因子: --
作者: [Ikuta, Y., M.Aono]
通讯作者: M.Aono
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