Extremely high fluorescence enhancement in quenching-free nanostructures

我们可以实现基于非金属粒子的非淬灭荧光。基于Mie理论的计算表明，GaP和Si粒子具有较高的增强因子。用GaP颗粒和染料分子进行的实验确实证明了荧光增强，其增强因子高达140。即使当分子位于距离粒子表面10 nm以内时，也观察到高度增强，这表明荧光不会猝灭。我们还从理论上考察了平面介质多层体系的强电场增强。介质波导被认为非常适合于猝灭自由荧光增强。

We could achieve the quenching-free fluorescence based on nonmetallic particles. Calculations based on the Mie theory suggested high enhancement factors for GaP and Si particles. Experiments performed with GaP particles and dye molecules indeed demonstrated the fluorescence enhancement with an enhancement factor as high as 140. A high enhancement was observed even when the molecules are located within 10 nm away from the particle surfaces, demonstrating that the fluorescence is quenching free. We also theoretically examined the high electric field enhancement in planar dielectric multilayer systems. The dielectric waveguide is expected to be very much suited to the quenching free fluorescence enhancement.