"Impurity Doping into Semiconductor Nanocrystals"

“半导体纳米晶体中的杂质掺杂”

• 批准号: 08834005
• 负责人: HAYASHI Shinji
• 金额: $ 1.47万
• 依托单位: Kobe University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 1996
• 资助国家: 日本
• 起止时间: 1996 至 1997
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-08834005/
• 关键词: nanocrystals; impurity; doping; Raman scattering; photoluminescence; energy transfer

The aims of this research project are, i) to establish the method of doping impurity atoms into semiconductor nanocrystals, ii) develop the analytical tools for verifying the doping and estimate the degree of doping, and iii) investigate the change in physical properties pf nanocrystals caused by doping, in particular, the optical properties.We could successfully dope B and P atoms into Si nanocrystals by applying the cosputtering technique. The success in doping could be verified by the appearance of Fano-type interference in Raman spectra. We could also successfully observe the change in the photoluminescence spectra caused by doping. The change in the photoluminescence spectra is believed to arise from the creation of excitons bound to the impurity states.Er and Yb ions could also be doped into SiO2 thin films containing Si nanocrystals. In the presence of Si nanocrystals, Er and Yb exhibited strong light emission, while the light emission was very weak, in the absence of Si nanocrystals. The strong light emission is caused by the energy transfer from Si nanocrystals to Er and Yb ions. The present results suggest the possibility of Si-based light emitting devices.

本课题的主要目的是：（1）建立半导体纳米晶掺杂的方法，（2）开发掺杂验证和掺杂程度评估的分析工具，（3）研究掺杂引起的纳米晶物理性质的变化，特别是光学性质的变化。掺杂的成功可以通过拉曼光谱中Fano型干涉的出现来验证。我们还可以成功地观察到掺杂引起的光致发光光谱的变化。光致发光光谱的变化被认为是由于与杂质态结合的激子的产生。Er和Yb离子也可以掺杂到含有Si纳米晶的SiO2薄膜中。在Si纳米晶的存在下，Er和Yb表现出很强的发光，而在没有Si纳米晶的情况下，发光很弱。这种强的发光是由Si纳米晶向Er和Yb离子的能量转移引起的。目前的结果表明，硅基发光器件的可能性。

项目成果

Y.Kanzawa et al.: "Preparation and Raman study of B-doped Si microcrystals" Materiol Science & Engineering. Vol.217/218. 155-158 (1996)

Y.Kanzawa 等人：“B 掺杂硅微晶的制备和拉曼研究”材料科学

M.Fujii: "Raman scattering from acoustic phonons confined in Si nanocrystals" Physical Review B. Vol.54 No.12. R8373-R8376 (1996)

M.Fujii：“Si nanocrystals 中声学声子的拉曼散射”Physical Review B. Vol.54 No.12。

M.Fujii et al.: "1.54μm photoluminescence of Er^<3+> doped into SiO_2 films containing Si nanocrystals : Evidence for energy transfer" Applied Physics Letter. Vol.71 No.9. 1198-1200 (1997)

M.Fujii 等人：“掺入含有 Si 纳米晶体的 SiO_2 薄膜中的 1.54μm 光致发光：能量转移的证据”《应用物理快报》第 71 卷第 1198-1200 期（1997 年）。

M.Fujii, S.Hayashi and K.Yamamoto: "Photoluminescence from B-doped Si nanocrystals" Journal of Applied Physics. (in press).

M.Fujii、S.Hayashi 和 K.Yamamoto：“B 掺杂硅纳米晶体的光致发光”应用物理学杂志。

Y.Kanzawa et al.: "Doping of B atoms into Si nanocrystals prepared by rf cospu Hering" Solid State Communications. Vol.100 No.4. 227-230 (1996)

Y.Kanzawa 等人：“将 B 原子掺杂到由 rf cospu Hering 制备的 Si 纳米晶体中”固态通信。