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Development of Efficient Si-nanocrystal-sensitized optical waveguide amplifiers

高效硅纳米晶敏化光波导放大器的研制

基本信息

批准号：
13555108
负责人：
HAYASHI Shinji
金额：
$ 8.58万
依托单位：
Kobe University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2001
资助国家：
日本
起止时间：
2001 至 2003
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-13555108/
关键词：
Optical amplifier Rare earth element Waveguide Energy transfer Silicon Nanocrystal

项目摘要

Er doped SiO_2 films containing Si nanocrystals as sensitizers have been investigated for an application to an efficient optical-amplifier. We demonstrate an optical-amplifier gain of 991cm^<-1> measured by the VSL (variable strip length) method at a wavelength of 1.55 μm using a slab waveguide. The amplification in the VSL measurement is observed within irradiation length of 60 μm in the slab waveguide. It has been found that the silicon-nanocrystals size (that is controlled by the annealing temperature) is very important to decrease the waveguide loss caused by excitons generated in the silicon nanocrystals. Core films containing silicon nanocrystals whose diameter is less than 2.7 nm show positive gain (that is amplification), because the above mentioned waveguide-loss is low. Sputtering and microfabrication processes to develop the optical amplifiers are deposition and RIE (reactive ion etching) of core patterns. A uniform core-film (4cmx8cm area) has been achieved on a 4 inch silicon wafer with a uniformity of ± 10 % in the photoluminescence intensity and the film thickness. 6 μm deep patterns in silica films have been fabricated using RIE, which can be used to fabricate the optical amplifiers. If the practical planar waveguide amplifier is realized at the wavelength of 1.55 μm used in optical telecommunication networks, a variety of novel photonic devices can be developed, because a new functionality is added to passive silica-based waveguide components.

本文研究了掺铒SiO_2薄膜作为光敏剂在高效光放大器中的应用。用<-1>可变带长法（VSL）测量了1.55 μm波长的平板波导光放大器增益为991 cm ~ 2。在60 μm的辐照长度范围内，观察到平板波导中VSL测量的放大效应。已经发现，硅纳米晶体的尺寸（其由退火温度控制）对于减少由硅纳米晶体中产生的激子引起的波导损耗是非常重要的。含有直径小于2.7nm的硅纳米晶体的芯膜显示正增益（即放大），因为上述波导损耗低。溅射和微加工工艺开发的光放大器的核心图案的沉积和RIE（反应离子蚀刻）。在4英寸硅片上获得了均匀的芯膜（4cm × 8 cm面积），其光致发光强度和膜厚的均匀性为± 10%。利用反应离子刻蚀（RIE）技术在SiO2薄膜上制作了6 μm深的图形，可用于制作光放大器。如果在光通信网络中使用的1.55 μm波长处实现实用的平面波导放大器，则可以开发出多种新型光子器件，因为无源二氧化硅基波导元件增加了新的功能。