Development of a spatio-time-resolved cathodoluminescence spectroscopy technique applicable for wide bandgap semiconductors through the generation and focusing of high-brightness femtosecond pulsed photoelectron beams

为了探测宽带隙半导体如AlN和高AlN摩尔分数AlGaN合金中的局部载流子动力学，使用具有高空间和时间分辨率的时空分辨阴极发光（STRCL）技术是优选的，因为电子束可以聚焦并注入到亚微米到纳米感兴趣的区域。在这项研究中，我们成功地开发了一种新型的前激发型高亮度脉冲光电子（PE）枪驱动的飞秒激光脉冲，并配备了这种PE枪的STRCL测量系统被用来测量局域发射动力学在GaN，AlN，和高AlN摩尔分数AlGaN合金。

To probe local carrier dynamics in wide bandgap semiconductors such as AlN and high AlN mole fraction AlGaN alloys, the use of spatio-time-resolved cathodoluminescence (STRCL) technique offering high spatial and temporal resolutions is preferred, becauseelectron beams can be focused and implanted into sub-micrometer to nanometer regions of interest. In this study, we succeeded in developing a novel front-excitation type high-brightness pulsed photoelectron (PE)- gun driven by femtosecond laser pulses, and the STRCL measurement system equipped with this PE-gun was used to measure the local emission dynamics in GaN, AlN, and high AlN mole fraction AlGaN alloys.