Displacive and Conductive Phenomenas in Ferroelectric Thin Films - Scaling effects and switching properties

铁电薄膜的极化开关受电子传导的影响。这个NSF-DFG联合提案将研究开关和传导之间的相互作用，强调这种相互作用的缩放行为。垂直缩放将由超薄外延膜完成，其中包括隧道范围内的厚度。横向缩放将由最先进的纳米光刻技术（如聚焦离子束铣削和电子束光刻）完成。研究将包括使用扫描探针显微镜的相关电导率和域映射，动态开关研究，压电表征，以及噪声测量和隧道电流研究。本研究结果将有助于回答矫顽力电压的标度行为问题，这对未来几代铁电随机存取存储器至关重要。

Polarisation switching of ferroelectric thin films can be influenced by electronic conduction. This joint NSF-DFG proposal will investigate the interactin between switching and conduction, emphasizing the scaling behavior of this interaction. The vertical scaling will be accomplished by ultrathin epitaxial films, which include thicknesses within the tunneling regime. The lateral scaling will be performed by state-of-the-art nanolithography (such as focused ion beam milling and e-beam lithography). The investigation will include correlated conductivity and domain mapping using Scanning Probe Microscopy, dynamic switching studies, piezoelectric characterization, as well as noise measurements and tunneling current studies. The results of this study will contribute to answering the question of the scaling behavior of the coercive voltage, which is crucial for future generations of ferroeletric random access memories.