Development of a multi-functional molecular memory based on current silicon process

我们提出了一种多功能单电子存储器，其中有吸引力的有机分子作为量子dos嵌入栅极绝缘层。如果单电子隧穿可以通过分子的能级来控制，那么当前无机量子点无法实现的新功能将被集成到当前基于硅的存储器件中。在这项研究中，我们建立了一种将分子嵌入绝缘层而不破坏它们的技术。结果，我们成功地证明了单电子隧穿嵌入在所提出的设计结构中的分子。这一发现给我们带来了两个有吸引力的功能，即非均相分子对隧道电流的多层操作和二乙烯光致变色分子的光学操作。我们的研究结果表明，有机分子在硅基技术方面具有很大的突破潜力。

We have proposed a multi-functional single-electron memory, where attractive organic molecules are embedded as quantum dos in a gate insulating layer. If single-electron tunneling can be controlled by energy levels of molecules, new functions, which are not realized in current inorganic quantum dots, would be integrated into current Si-based memory devices. In this study, we established a technique to embed molecules in an insulating layer without destroying them. As a result, we successfully demonstrated single-electron tunneling through molecules embedded in the proposed devise structure. The finding brought us two attractive functions, which are multilevel operation of tunneling current by heterogeneous molecules and optical manipulation with diarylethene photochromic molecules. Our achievements suggest that organic molecules possess high potential for a breakthrough in Si-based technology.