Fabrication of single-crystalline AlN layer using a novel LPE technique and discussion of the growth mechanism

AlN是一种很有前途的AlGaN基深紫外光LED衬底材料。最近，作者研究了一种独创的使用Ga-Al溶液的液相外延生长技术。本文阐述了氧在液相外延技术中的作用，并在此基础上对该技术的生长机理进行了探讨。此外，我们还尝试在氮化的a面蓝宝石模板上生长氮化铝。因此，使用氮化的a面蓝宝石成功地生长了高质量的AlN层。

AlN is a promising substrate material for AlGaN-based deep UV-LED. Recently, authors investigate an original liquid phase epitaxial growth technique using Ga-Al solution. In this study, it was clarified the role of oxygen in the liquid phase epitaxy technique, and, based on the results, growth mechanism of this technique was discussed. Moreover, we have attempted to grow AlN on nitrided a-plane sapphire template. In consequence, high-quality AlN layer successfully grew using nitrided a-plane sapphire.