Development of nanometric photochemical vapor deposition by optical near field

提出了一种基于光学近场的纳米光化学气相沉积(PCVD)方法。为了防止沉积在光纤探头上，还提出了去核技术。还提出并尝试了直接作证。首先，利用紫外区的低损耗光纤，发展了可重复使用的选择性化学腐蚀技术，制作了一代光纤探头。对于这种蚀刻，使用了缓冲HF溶液。实验结果表明，该光纤探头的光传输损耗降低到0.1dB/m，光激发效率提高到1×10~(-2)和1kW/cm~2，足以引发PCVD的光化学反应。将该探头安装在一个充满锌(CH_3)_2分子气体的真空室中，在光纤探头顶部一个接一个地解离锌(CH_3)_2分子，在平板玻璃板上沉积金属锌原子。The Second Damage…更多的电子器件采用了氩激光器和准分子激光器作为光源。开发了探头扫描计算机软件和剪力检测/控制系统。利用上述实验系统进行实验，证实了宽度仅为20 nm的锌图案的沉积。原子层的数量估计为8层。实际宽度应小于20 nm，因为这一观测值受剪切力显微镜分辨率的限制。这种沉积的优点是通过扫描探针可以沉积任意的图案，可以方便地用于修复IC的光掩模，图案的宽度取决于探针的大小，而不是沉积时间。沉积高度与沉积时间成正比。为了进一步开发，在Zn(CH_3)_2气体中引入氧气制得了纳米级的氧化锌点状薄膜。由于氧化锌可以发出蓝光，所以半导体点的沉积可以开辟纳米光子集成的新领域。较少

Method of nanometric photochemical vapor deposition (PCVD) was proposed by using optical near field(ONF). Plenucleation technique was also proposed in order to preventing deposition on the fiber probe. Direct deposition was also proposed and tried. First, using a low loss optical fiber in the ultraviolet region, reproducible technique of selective chemical etching was developed to fabricate a fiber probe for ONE generation. For this etching, bufferdHF solution was used. As a result, the transmission loss was reduced to 0.1dB/m. By this fiber probe, the efficiency of generating ONE and the ONF power density were increased to 1 x 10^<-2>, and 1kW/cm^2, respectively, which are sufficiently high for inducing photochemical reaction for PCVD.Installing this probeinto a vacuum chamber filled with Zn(CH_3)_2 molecular gas, experiments were carried out to deposit metallic Zn atoms on a flat glass plate after dissociating Zn(CH_3)_2 molecules by ONE on the top of the fiber probe. The second harm … More onics of an argon laser and excimer laser were used as a light source. Computer softw are for scanning the probe and shear-force detection/control system were developed. As aresult of experimentusing the abovementioned experimental system, deposition of Zn pattern with the width as narrow as 20 nm was confirmed. The number of atomic layers was estimated to be eight. Real width should be narrower than 20 nm because this observed value is limited by the resolution of shear-force microscope. Advantage of thie deposition is that an arbitrary pattem can be deposited by scanning the probe, which can be conveniently used for repairing the photomask of IC.The width of the pattern depend on the probe size, not on the deposition time. The height was proportional to the deposition time. For further development, nano-sizeddots of ZnO was depositedby introducing oxigen gas into the Zn(CH_3)_2 gas. Since ZnO can emit a blue light, kind of deposition of semiconductor dots can open a new field of nanometric photonic integration. Less