SOCRATES - SilicOn Carbide tRAnsistor Trench procEsS (SOCRATES)

SOCRATES将把碳化硅（SiC）和GaN沟槽加工技术引入英国，为PEMD功率晶体管供应链建立关键能力。这个为期9个月的项目将定义关键的半导体制造工艺步骤，以将用于汽车电力电子的颠覆性SiC功率MOSFET供应链引入英国，并与推动电力革命（DER）计划的目标保持一致。我们将建立一个新的英国SiC制造能力-在材料和组件DER中心开发沟槽MOSFET技术，关键是，试点SiC沟槽蚀刻工艺，目前的SiC二极管和晶体管仍然基于分别在2001年和2011年商业化的平面器件，其在效率和可靠性方面受到限制。提出的沟槽技术将彻底改变SiC晶体管的性能，降低导通电阻，提高能源效率-用于汽车系统。VGaN-on-SiC器件将进一步推动性能和成本优势。该项目将以很少的额外成本加速其发展。该项目解决了PEMD英国供应链中的明显差距;缺乏（1）沟槽SiC功率MOSFET工艺和（2）英国电动汽车行业的大批量SiC晶体管供应商，目前没有英国的大批量6”-8”SiC晶圆工厂。相比之下，我们的国际竞争对手正在建立关键的PEMD战略联系，以便为未来的电动汽车市场提供SiC器件;英飞凌与现代，意法半导体（每月生产4000片晶圆）与特斯拉，XFab与通用汽车和福特。因此，英国有可能失去向英国汽车行业提供这一关键技术的安全保障。

SOCRATES will introduce silicon carbide (SiC) and GaN trench processing technologies to the UK, establishing a critical capability into the PEMD supply chain for power transistors. This 9-month project will define the critical semiconductor manufacturing processing steps required for introducing a disruptive SiC power MOSFET supply chain for automotive power electronics to the UK, aligned with the goals of the Driving the Electric Revolution (DER) initiative. We will establish a new UK SiC manufacturing capability - developing Trench MOSFET technology within the Materials and Components DER Centre and critically, pilot SiC trench etch processing, whilst also developing a backside SiC etch process module for future VGaN-on-SiC devices.Current SiC diodes and transistors are still based on planar devices commercialised in 2001 and 2011 respectively -- which are limited in terms of efficiency and reliability. The proposed trench technology will revolutionise the performance of SiC transistors, with lower on-state resistances, and enhanced energy efficiencies -- to be employed in automotive systems. VGaN-on-SiC devices will further drive performance and costs advantages. This project intervention will accelerate their development at little additional cost.This project addresses clear gaps in the PEMD UK supply chain; The lack of (1) a trench SiC power MOSFET process and (2) a high-volume supplier of SiC transistors for UK EV industry, with no current UK-based, high-volume 6"-8" SiC wafer fabs. In contrast, our international competitors are establishing key strategic PEMD links, in order to supply SiC devices to the future EV market; Infineon with Hyaundai, STMicroelectronics (already producing 4000 wafers per month) with Tesla and XFab with General Motors and Ford. Thus, the UK is in danger of losing its security of supply of this crucial technology to the UK automotive sector.