Developing machining technologies for single crystal gallium oxide

氧化镓是一种新型半导体材料，可用于制造比硅（Si）损耗更低的二极管和晶体管，以及比碳化硅（SiC）和氮化镓（GaN）成本更低、性能更好的电力电子器件。该项目旨在了解这种独特的材料在加工过程中的变形和去除的性质。一个成功的结果不仅会为下一代功率半导体开发一种使能的加工技术，而且会产生对加工和材料科学的新理解。

Gallium oxide is a new semiconductor material that can be used to make diodes and transistors with lower loss than silicon (Si), and power electronic devices with lower cost and better performance than silicon carbide (SiC) and gallium nitride (GaN). This project aims to understand the nature of deformation and removal of this unique class of materials during machining. A successful outcome will not only develop an enabling machining technology for this next generation power semiconductor, but new understanding of machining and materials science will be generated.