Ultimate Control in Semiconductor Lasers
Ultimate Control in Semiconductor Lasers
批准号:
EP/K023195/2
负责人:
Richard Hogg
金额:
$41.91万
依托单位:
依托单位国家:
英国
项目类别:
Research Grant
财政年份:
2015
资助国家:
英国
项目状态:
已结题
起止时间:
2015 至 --
中文摘要
半导体激光器目前的应用范围很广,渗透到生活的各个方面。事实上,在发达国家,大多数人已经拥有几台激光器,并从更多的激光器中获益。随着每一项新技术,这种扩散将继续下去。最重要的是,激光使互联网时代成为可能,因为所有在地球仪上传输的数据都是以激光的形式传输的。因此,发达国家的大多数人在典型的一天中依赖于许多激光器。因此,降低其拥有成本对于将这些惠益扩大到发展中世界并为我们大家带来新的惠益至关重要,光子学未来的潜在应用似乎是无限的,新技术和应用不断涌现。半导体激光器的主要优点是,如果应用具有足够大的体积,则半导体激光器的成本非常低。DVD播放机就是一个很好的例子--激光器每台要花几便士。因此,半导体激光器使新技术、设备和工艺得以商业化。然而,半导体激光器必须能够产生所需的光的“味道”;即正确的波长、光谱宽度、功率、偏振、光束形状等。半导体激光器的一些基本参数可以通过材料的设计和选择来控制,例如波长、光谱纯度(线宽)。然而,使用当前的技术,偏振和光束轮廓通常在制造时是固定的,并且仅可以随后由外部光学部件改变。这引入了额外的成本(增加了环境影响)并降低了装置的整体效率和有用性。对于未来的工程师和科学家来说,如果能够完全控制半导体激光器的输出,那将是理想的,这将为未来的应用提供无限的可能性。已知物质在光波长尺度上的改变允许控制材料的光学性质。即使是像鼠标这样简单的东西中的激光也包含了许多这样的技术。我们将开发新的纳米级半导体制造来改变光-物质相互作用,并设计控制激光束的偏振和形式。我们的工作将首次实现可批量制造的光子晶体面发射激光器(PCSEL)。纳米尺度的光子晶体负责控制激光器的特性。它只是一个大小与光本身相似的周期性图案,这种周期性图案的一个自然例子产生了一些蝴蝶翅膀的蓝色,或蛋白石的彩虹色。在我们的例子中,光子晶体的每个细节都将被建模、理解和优化,以控制激光器的特性,满足一系列需求。激光器将被设计成几乎为零发散,并且还将首次允许电子控制发散和偏振,并允许直接创建定制的工程光束轮廓和图案。实现具有理想光束轮廓的高效率、面积可扩展的高功率激光器将有助于降低激光器件制造中的能耗及其拥有成本。开发的技术将允许未来光源的最终设计控制,希望将激光应用限制在想象中。一旦成功,这些设备将取代现有的商业光子学中的现有激光器,并使更多的新兴应用领域成为可能。这将通过为激光设备引入新功能并降低现有产品的成本来实现。我们将与物理理解和设备工程一起开发这项技术,并与此类设备的批量制造商的世界领先者密切联系。
英文摘要
Current applications for semiconductor lasers are wide ranging and pervade every aspect of life. Indeed, in the developed world, most people already own several lasers and gain the benefit of many more. With every new technology, this proliferation is set to continue. Most importantly, the laser enables the internet age since all data transmitted around the globe is carried as flashes of laser light. As a consequence most people in the developed world have come to depend on many lasers during a typical day. The reduction in their cost of ownership is therefore of critical importance to the extension of these benefits to the developing world and also bringing new benefits to us all.The potential future applications of photonics are seemingly unlimited, with new technologies and applications continuing to emerge. The key advantage of a semiconductor laser is that if an application has sufficiently large volume, the cost of the semiconductor laser is very low. The DVD player is a good example -with the laser costing a few pence each. The semiconductor laser therefore enables new technologies, devices and processes to be commercialized. However, semiconductor lasers must be able to generate the required "flavour" of light; i.e. the correct wavelength, spectral width, power, polarization, beam shape, etc.Some of the fundamental parameters of a semiconductor laser may be controlled by the design and choice of materials, e.g. wavelength, spectral purity (line-width). However, using current technologies the polarization and beam profile are generally fixed at manufacture and may only be subsequently altered by extrinsic optical components. This introduces additional cost (increasing the environmental impact) and reduces the overall efficiency and usefulness of the device. For future engineers and scientists it would be ideal if there were complete control of the output from a semiconductor laser, providing unlimited possibilities in terms of future applications. The alteration of matter on the scale of the wavelength of light is known to allow the control of the optical properties of a material. Even the laser in something as simple as a mouse incorporates a number of such technologies. We will develop novel nano-scale semiconductor fabrication to modify light-matter interaction and engineer the control of the polarization and form of a laser beam. Our work will realise a volume manufacturable photonic crystal surface emitting laser (PCSEL) for the first time. The nano-scale photonic crystal is responsible for controlling the properties of the laser. It is simply a periodic pattern similar in size to the light itself, a natural example of this periodic patterning produces the blue colour in some butterfly wings, or the iridescence of opal. In our case, every detail of the photonic crystal will be modeled, understood and optimized to control the properties of the laser to meet a range of needs. Lasers will be designed to exhibit almost zero divergence and will also allow, for the first time, the electronic control of divergence and polarization and allow the direct creation of custom engineered beam profiles and patterns. The realization of high efficiency, area scalable high power lasers with ideal beam profiles will contribute to reduced energy consumption in the manufacture of laser devices, and in their cost of ownership. The technologies developed will allow the ultimate in design control of future optical sources, hopefully limiting laser applications only to the imagination. Once successful, such devices will displace existing lasers in established commercial photonics and enable many more emerging application areas. This will be made possible by introducing both new functionality to laser devices and reducing the cost of existing products. We will develop this technology alongside physical understanding and device engineering, liaising closely with world-leaders in the volume manufacturer of such devices.
期刊论文(7)
专著(0)
科研奖励(0)
会议论文
登录
查看更多内容
DOI:
10.1038/srep13203
发表时间:
2015-08-20
期刊:
Scientific reports
影响因子:
4.6
作者:
[Taylor RJ, Childs DT, Ivanov P, Stevens BJ, Babazadeh N, Crombie AJ, Ternent G, Thoms S, Zhou H, Hogg RA]
通讯作者:
Hogg RA
DOI:
10.1109/jstqe.2017.2701281
发表时间:
2017-05
期刊:
IEEE Journal of Selected Topics in Quantum Electronics
影响因子:
4.9
作者:
[Richard J. E. Taylor;Guangrui Li;P. Ivanov;D. Childs;T. Roberts;B. Stevens;B. Harrison;J. Sarma;N. Babazadeh;Gary Terrnent;R. Hogg]
通讯作者:
Richard J. E. Taylor;Guangrui Li;P. Ivanov;D. Childs;T. Roberts;B. Stevens;B. Harrison;J. Sarma;N. Babazadeh;Gary Terrnent;R. Hogg
Modelling and Device Simulation of Photonic Crystal Surface Emitting Lasers Based on Modal Index Analysis
基于模态指数分析的光子晶体面发射激光器建模与器件仿真
DOI:
10.1109/islc.2018.8516220
发表时间:
2018
期刊:
影响因子:
--
作者:
[Li G]
通讯作者:
Li G
DOI:
10.1007/s11082-016-0888-0
发表时间:
2017
期刊:
Optical and quantum electronics
影响因子:
3
作者:
[Taylor RJE]
通讯作者:
Taylor RJE
DOI:
10.1109/jstqe.2019.2950795
发表时间:
2019-11-01
期刊:
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
影响因子:
4.9
作者:
[Li, Guangrui, Sarma, Jayanta, Hogg, Richard]
通讯作者:
Hogg, Richard
共 6 条
Integrated Solid-State Steerable Lasers (I-STEER)
-
批准号:EP/X032868/1
-
项目类别:Research Grant
-
资助金额:$120.29万
-
财政年份:2024
-
负责人:Richard Hogg
-
依托单位:
High-powEr phosphorous-based DFB Lasers for Cold ATom Systems (HELCATS)
-
批准号:EP/R044848/1
-
项目类别:Research Grant
-
资助金额:$24.73万
-
财政年份:2018
-
负责人:Richard Hogg
-
依托单位:
Ultimate Control in Semiconductor Lasers
-
批准号:EP/K023195/1
-
项目类别:Research Grant
-
资助金额:$89.52万
-
财政年份:2013
-
负责人:Richard Hogg
-
依托单位:
Sub-Cellular OCT Imaging
-
批准号:BB/J021571/1
-
项目类别:Research Grant
-
资助金额:$16.03万
-
财政年份:2012
-
负责人:Richard Hogg
-
依托单位:
Next Generation Components and Systems for Biomedical Imaging
-
批准号:EP/I018328/1
-
项目类别:Research Grant
-
资助金额:$133.58万
-
财政年份:2011
-
负责人:Richard Hogg
-
依托单位:
Next Generation Swept Laser Sources for Optical Coherence Tomography
-
批准号:EP/H008004/1
-
项目类别:Research Grant
-
资助金额:$14.43万
-
财政年份:2010
-
负责人:Richard Hogg
-
依托单位:
Strain engineered InAs/GaAs quantum dots for long wavelength emission
-
批准号:EP/F03427X/1
-
项目类别:Research Grant
-
资助金额:$8.5万
-
财政年份:2008
-
负责人:Richard Hogg
-
依托单位:
Nano- and Micro-scale Integration of Glass-on-Semiconductor for Photonic Components Engineering
-
批准号:EP/D04801X/1
-
项目类别:Research Grant
-
资助金额:$53.4万
-
财政年份:2006
-
负责人:Richard Hogg
-
依托单位:
Industry/University Cooperative Research Activity: The Roleof Slurry Rheology in Size Reduction and Material Transport in Tumbling Ball Mills
-
批准号:8414214
-
项目类别:Continuing Grant
-
资助金额:$18.83万
-
财政年份:1985
-
负责人:Richard Hogg
-
依托单位:
Industry/University Cooperative Research Activity: Fundamentals of the Flocculation Process in Chemical Engineering
-
批准号:8121731
-
项目类别:Continuing Grant
-
资助金额:$12.54万
-
财政年份:1982
-
负责人:Richard Hogg
-
依托单位:
Mass Transport of Particles in Tumbling Mills
-
批准号:7820962
-
项目类别:Standard Grant
-
资助金额:$8.93万
-
财政年份:1979
-
负责人:Richard Hogg
-
依托单位:
Mixing and Segregation in Particulate Materials
-
批准号:7204247
-
项目类别:Standard Grant
-
资助金额:$8.47万
-
财政年份:1973
-
负责人:Richard Hogg
-
依托单位:
Black Colleges (Four-Year)
-
批准号:7207338
-
项目类别:Standard Grant
-
资助金额:$3.55万
-
财政年份:1972
-
负责人:Richard Hogg
-
依托单位:
国内基金
海外基金
Cortical control of internal state in the insular cortex-claustrum region
-
批准号:--
-
项目类别:--
-
资助金额:25万元
-
批准年份:2020
-
负责人:Robert Konrad Naumann
-
依托单位: