Molecular Beam Epitaxy of Boron Nitride and Graphene layers and heterostructures.

我们将使用分子束外延(MBE)生长由氮化硼、石墨烯和相关化合物组成的高质量、大面积外延层和异质结构。这些石墨烯/氮化硼异质结是一类新的多层(垂直传输)电子器件的成员，在这种电子器件中，载流子可以垂直于石墨烯层的平面移动。我们将确定并优化氮化硼和石墨烯单原子层的生长条件，然后对异质结构进行程序化生长和处理，在异质结构中顺序生长单层或多层石墨烯和氮化硼，以提供实现新型能带结构工程化功能器件的架构。2013年2月，EPSRC授予我们一项设备补助，以支持我们的拟议研究，让我们购买定制设计的分子束外延(MBE)系统，该系统致力于石墨烯和氮化硼组成的外延层和异质结构的生长。诺丁汉大学认为这个项目具有重要的战略意义，并通过提供新的MBE系统的安装费用和两年的初始运行费用来支持该项目。我们现在正在申请这笔新的拨款，以确保研究人员(PDRA的1.5人)能够实施拟议的为期3年的项目。

We will grow high-quality, large-area epitaxial layers and heterostructures composed of boron nitride, graphene and related compounds using molecular beam epitaxy (MBE). These graphene/boron nitride heterostructures are members of a new class of multilayer ("vertical transport") electronic devices in which charge carriers can move perpendicular to the plane of the graphene layers. We will identify and optimise the conditions for growth of single atomic layers of boron nitride and graphene, followed by the programmed growth and processing of heterostructures in which single or multiple layers of graphene and boron nitride are grown sequentially to provide architectures by which new types of band-structure engineered functional device can be realised. In February 2013 EPSRC supported our proposed research by awarding us an Equipment Grant to purchase a custom designed molecular beam epitaxy (MBE) system dedicated to the growth of epitaxial layers and heterostructures composed of graphene and boron nitride. The University of Nottingham regards this project as strategically important and is supporting it by providing the cost of installation of the new MBE system and the initial running costs for 2 years. We are now applying for this new grant to secure the research staff (1.5 of PDRA) to run the proposed 3-year project.