Atomically Deterministic Doping and Readout For Semiconductor Solotronics (ADDRFSS)

ADDRFSS方案的目的是利用确定性掺杂来探索用于量子信息技术、自旋电子学、光学集成电子学和计量学的替代性、破坏性的硅基半导体器件范例的基本物理和工艺要求。具体地说，我们将生产各种“分子”和“晶格”结构，并将它们用于新的物理和新设备，重点是放大和可制造性。半导体中的单一缺陷，以原子尺度的精度放置，表明了新的量子和经典器件的巨大潜力，被称为“孤子学”，但现在需要的是这种器件概念的实际实施。硅提供了一种令人兴奋的可能性，可以使用由重叠的杂质波函数排列而成的波函数作为原子尺度的功能器件组件，并具有巨大的知识库的关键优势。尽管大量、低成本的CMOS研究不是英国的优先事项，但任何新的量子技术都必须与之兼容，才能实现与现有IC技术的工艺集成。通过提高我们用于高通量掺杂的确定性掺杂能力，并扩大我们的化学专属性以允许使用磁性掺杂剂和薄的锗掺杂层，我们将生产晶片尺寸和多种功能的器件。我们将开发的一个经典体系结构的一个示例将采用n(+)-n(++)-n晶体管的形式，其中有三个不同电离电位的施主(例如P-Sb-Bi等)。除非中心施主的电势降低到两端之间，否则电流从左到右的流动被阻断。在更基本的水平上，冷原子晶格中的人造固体由于能够沿着晶格传输量子信息和纠缠多个原子而产生巨大的兴奋。其目标是实现大规模的量子计算机和量子模拟器(用于模拟高T_c超导体的相变等用经典计算机特别难模拟的)。我们计划建立的硅“分子”和“固体”对于这些目的也很有吸引力，但有显著的好处：杂质可以永久地被困在硅“真空”中，扫描隧道显微镜可以获得波函数的直接图像，不需要复杂的光学和气体处理系统--由此产生的“冻结的”原子芯片是稳定的和固有的可伸缩的，它们的成本将不可避免地下降，就像它们对半导体技术所做的那样。我们已经确定，主要缺点(非辐射弛豫)是可以克服的，我们的目标是用一个可扩展和电接触的系统来反映原子陷阱的发展，既可以用光刻图案的导线，也可以通过扫描探头尖端。

The aim of the ADDRFSS Programme is to exploit deterministic doping to explore the fundamental physics and processing requirements of alternative, disruptive silicon-based semiconductor device paradigms for quantum information technologies, spintronics, optically integrated electronics and metrology. Specifically, we will produce a great variety of "molecule" and "lattice" structures, and exploit them for new physics and new devices with a major focus on scale-up and manufacturability. Single defects in semiconductors, placed with atomic-scale precision, have suggested enormous potential for new quantum and classical devices, termed "solotronics", but what is required now is practical implementation of such device concepts. Silicon offers the exciting possibility of using wavefunctions built up by arrangement of overlapping impurity wavefunctions as atomic-scale functional device components and has the crucial advantage of a huge knowledge base. Although high-volume, low-cost CMOS research is not a UK priority, any new quantum technologies must be compatible with it to enable process integration with existing IC technology. By advancing our deterministic doping capabilities for high throughput doping, and broadening our chemical specificity to allow use of magnetic dopants and thin germanium doped layers, we will produce devices of wafer-scale dimensions and diverse functionality.One example of the classical architectures we will develop will incorporate the smallest possible silicon devices with form of an n(+)-n(++)-n transistor, where there are three donors of different ionization potential (e.g. P-Sb-Bi etc). Current flow from left to right is blocked unless the potential of the central donor is lowered to be between that of the ends.At a more fundamental level, artificial solids in cold-atom lattices are generating great excitement due to their ability to transfer quantum information along the lattice, and to entangle multiple atoms. The aim is to realize large scale quantum computers and quantum simulators in and out of equilibrium (for modelling e.g. phase transitions in high-Tc superconductors etc that are particularly difficult to model with classical computers). The silicon "molecules" and "solids" we propose to build are also attractive for these purposes but with significant benefits: the impurities can be trapped inside a Si "vacuum" permanently and direct images of wavefunctions can be obtained with scanning tunnelling microscopy, and there is no need for elaborate optical and gas-handling systems - the resulting "frozen" atom chips are stable and inherently scalable and their costs will inevitably fall as they always have done for the semiconductor technology. We have established that the main disadvantage (non-radiative relaxation) is surmountable and we aim to mirror the atom-trap developments with a system that is scalable and electrically contactable, both with lithographically patterned wires and through scanning probe tips.