Growth of hexagonal boron nitride for deep ultraviolet photonics, quantum emitters and van der Waals substrates

六方氮化硼（hBN）由于其在深紫外（UV）光子学、单光子发射以及与范德华（vdW）异质结构结合方面的技术潜力而受到国际关注。hBN是一种层状材料，其中硼和氮原子之间的强共价键稳定了平面蜂窝状原子排列。在其块状结构中，hBN由许多这样的平面堆叠在一起，并且，像石墨一样，厚度低至单层的hBN层可以从块状晶体中剥离。已经有许多证明表明，剥离的hBN层可以与其他层状材料（例如石墨烯）结合，形成“范德华异质结构”，其中hBN充当隧道势垒、衬底或栅介电介质。对hBN的兴趣促使许多团队使用各种技术探索hBN薄膜和单层的生长，但事实证明，很难重现高质量的mm级体hBN晶体的光学和电学特性，这些晶体是由我们在日本筑波的项目合作伙伴生长的。在最近的一项突破中，我们证明了hBN可以使用高温分子束外延（HT-MBE）生长，并且使用该技术生长的层具有前所未有的光学质量，在深紫外区域具有强发光，单层厚度的光子能量为6.08 eV。这种高光子能量为固体器件在UV-C范围内发光提供了前景，这与水净化和表面消毒有关。在与澳大利亚学者的合作中，我们也证明了单光子发射器可以在我们的hBN材料中形成。此外，我们已经证明了石墨烯和氮化硼的横向异质结构的生长，其中成分在单个单层内变化。这些结构被预测具有新的电子和磁性能。为了在我们早期有希望的成果的基础上，实现hBN的技术潜力，我们现在提议推进我们对相关生长机制的理解，并通过诺丁汉大学和我们的国际合作网络，探索高质量hBN单层和薄膜提供的技术机会。我们的假设是HT-MBE为高质量hBN层的可扩展生长提供了一条途径，这在深紫外光子学，单光子源和vdW异质结构领域具有技术开发潜力，以及探索hBN边缘状态和横向异质结的电子特性。在我们的研究计划中，我们将调查和优化hBN的HT-MBE生长。此外，我们将探索hBN掺杂和简单光电器件的形成，以及BNC和BNSi的hBN基合金的生长，作为自发形成相分离纳米结构和带隙工程的途径。此外，我们将建立生长参数与hBN中碳诱导单光子发射体形成之间的关系。为了确定ht - mbe生长的hBN在深紫外光子学方面的潜力，我们将制造在UV- c波长下工作的原型设备。我们还将利用外延hBN来研究横向hBN/石墨烯异质结的形成和结构，并研究由于电子-电子相互作用在这些结构中出现的新型电子和磁效应。一个重要的进一步目标是证明hBN在大面积衬底上的可扩展生长，这些衬底是商用的，例如蓝宝石和碳化硅，因此hBN层与工业中广泛使用的加工和制造技术兼容。

Hexagonal boron nitride (hBN) is currently attracting international attention due to its technological potential for deep ultraviolet (UV) photonics, single photon emission and its incorporation into van der Waals (vdW) heterostructures. hBN is a layered material in which strong covalent bonds between boron and nitrogen atoms stabilise a planar honeycomb atomic arrangement. In its bulk form hBN consists of many such planes stacked on top of each other, and, like graphite, layers of hBN with thickness down to a single monolayer can be exfoliated from bulk crystals. There have been many demonstrations showing that exfoliated hBN layers can be combined with other layered materials, for example graphene, to form 'van der Waals heterostructures' in which hBN acts as a tunnel barrier, substrate or gate dielectric. The interest in hBN has motivated many groups to explore the growth of thin films and monolayers of hBN using various techniques, but it has proved difficult to reproduce the optical and electrical properties of the highest-quality mm-scale bulk hBN crystals, which are grown by our Project Partners in Tsukuba (Japan). In a recent breakthrough, we demonstrated that hBN can be grown using high-temperature molecular beam epitaxy (HT-MBE) and that layers grown using this technique have unprecedented optical quality with strong luminescence in the deep UV region with a photon energy, for monolayer thickness, of 6.08 eV. This high photon energy offers the prospect of solid-state devices emitting light in the UV-C range, which is known to be relevant to water purification and surface sterilisation. In collaboration with Australian academics, we have also shown that single photon emitters can be formed in our hBN material. In addition, we have demonstrated the growth of lateral heterostructures of graphene and boron nitride, in which the composition varies within a single monolayer. These structures are predicted to have novel electronic and magnetic properties. In order to build on our promising early results and realise the technological potential of hBN, we now propose to advance our understanding of the relevant growth mechanisms and explore, both in Nottingham and through our network of international collaborations, the technological opportunities provided by high quality hBN monolayers and thin films. Our hypothesis is that HT-MBE provides a route to the scalable growth of high-quality hBN layers, which have the potential for technological exploitation in the areas of deep UV photonics, single photon sources and vdW heterostructures, as well as the exploration of the electronic properties of hBN edge states and lateral heterojunctions. In our research programme we will investigate and optimise HT-MBE growth of hBN. In addition, we will explore doping of hBN and the formation of simple optoelectronic devices, as well as the growth of hBN-based alloys of BNC and BNSi as a route to the spontaneous formation of phase separated nanostructures and band gap engineering. In addition, we will establish the relationship between growth parameters and the formation of carbon-induced single photon emitters in hBN. To determine the potential of HT-MBE-grown hBN for deep UV photonics, we will fabricate prototype devices operating at UV-C wavelengths. We will also utilise epitaxial hBN to study the formation and structure of lateral hBN/graphene heterojunctions and investigate the emergence of novel electronic and magnetic effects in these structures due to electron-electron interactions. An important further objective is to demonstrate the scalable growth of hBN on large area substrates, which are commercially available, for example sapphire and silicon carbide, so that the hBN layers are compatible with processing and fabrication techniques, which are used widely in industry.