Gallium Oxide Power Semiconductor Devices

目的和目标-为高压（> 10 kV）氧化镓电力电子应用提供突破性技术。这些设备在电网级电力系统中无处不在。主要目的是制造常关型氧化镓晶体管。探索新的工艺技术，包括离子注入，氧化物沉积，金属化和相应的退火，以建立在B-镓氧化物的器件技术。- 利用涵盖二维、三维场效应晶体管结构和工艺流程的有限元软件设计最终功率半导体器件。方法这项工作将在纳米健康中心的洁净室微型和纳米制造套件中进行。通过一系列新颖的光刻、氧化物/金属沉积和退火步骤，将制造基于B -氧化镓的器件。制造的器件将基于先前使用有限元软件设计/建模的结构，有限元软件是一种经典的漂移扩散工具，可以模拟半导体器件技术的电流、电场分布和工艺流程。最后，器件结构将在探针台、半导体分析仪和材料学院提供的显微镜套件上进行电气和物理表征。其中大部分工作将在沃尔夫森研究实验室进行。

Aims and Objectives- Deliver a disruptive technology for high voltage (>10kV) gallium oxide power electronics application. These devices are ubiquitous in grid-level power systems.- Main aim is to fabricate a normally-off gallium oxide transistor.- Explore novel processing techniques including ion implantation, oxide deposition, metallisation and corresponding annealing in order to establish a device technology in B-gallium oxide. - Design the final power semiconductor device through utilising finite element software that covers 2-D, 3-D field effect transistor structures and process flow. MethodologyThe work will be undertaken in the Centre for Nano-health cleanroom micro- and nano-fabrication suite. Through a series of novel photolithography, oxide / metal deposition and annealing steps, devices based on B -gallium oxide will be fabricated. The devices fabricated will be based on structures that have previously been designed / modelled using finite element software, a classic drift-diffusion tool that emulates current flow, electric field distribution and process flows of semiconductor device technology. Finally, the device structures will be characterised electrically and physically on probe stations, semiconductor analysers and the microscopy suite available through the Materials Academy. Much of this work will be carried out in the Wolfson Research Laboratory.