Silicon Carbide Trench Refill Epitaxy for Super-Junction High Voltage Power Devices

微电子器件技术-物理科学该项目旨在研究碳化硅(SiC)超结材料和器件在10-15年内作为高压直流(HVDC)国家电网输电的开发。它将包括1)使用计算机模拟的器件建模，2)材料制造和3)器件构造，所有这些都使用华威的设施。构建碳化硅超结器件的特殊方法将是沟槽再填充外延。通过重新填充沟槽制造的垂直器件将受到局部区域不对称、工艺不对准或其他设计偏差造成的掺杂不平衡的影响。将通过TCAD软件(Centaurus)进行模拟，以确定这种掺杂不平衡将如何影响非SJ和SJ器件之间的RON-VBR特性。材料制造将侧重于沟槽选择性、精确的掺杂控制、表面平坦化，以实现宽工艺窗口和快速生长速度。设备建造方面的挑战将是将以前活动中的所有知识和注意事项纳入标准的建造过程。这将导致新技术的出现，这些技术可能会被包括在许多电力电子领域。对生产效率、可靠性和成本进行比较，进行整体优化。

Microelectronic device technology - Physical SciencesThe project aims to investigate Silicon Carbide (SiC) superjunction materials and devices for exploitation in 10-15 years as high voltage direct current (HVDC) national grid transmission. It will consist of 1) device modelling using computer simulation, 2) materials fabrication and 3) device construction, all using facilities at Warwick. The particular method to construct SiC superjunction devices will be trench refill epitaxy. Vertical devices made by trench refilling will be subject to doping imbalances caused by local region asymmetry, process misalignments or other deviations from design. Simulation by TCAD software (Centaurus) will be performed to determine how this doping imbalance will affect the RON vs VBR characteristics between non-SJ and SJ devices. Materials fabrication will focus on trench selectivity, precise dopant control, surface planarization, achieving wide process windows and fast growth rates. Challenges in device construction will be incorporating all the knowledge and caveats from previous activities into a standard construction process. This will result in new technologies, which could be included in many power electronics areas. Efficiency, reliability and cost of production will be compared for overall optimization.