Crystal growth equipment for novel materials for spintronics

目前正在努力同时利用电子的自旋和电荷自由度，因为这对构建设备有很大的希望。 这种自旋电子器件的一个日常例子是今天硬盘驱动器中使用的磁阻电阻读取头。 为了在定制自旋电子材料方面取得进一步的进展，我们需要更好地理解磁矩是如何在低载流子密度系统中形成的。因为这使得可以同时调整化合物的磁性和电性。虽然我们今天已经很好地理解了磁矩是如何形成的，当它们被很好地局域化时，我们的理解就不那么完整了，当磁性来自费米表面不同部分的自旋极化时。为了获得这种理解，需要良好的模型系统。有了这个提议，我们计划购买两个必要的组成部分，我们认为这是一个很好的模型化合物，用于研究自旋电子材料的基础物理合成的FeGe。

Major efforts are currently underway on utilizing the spin- and charge degrees of freedom of an electron at the same time, as this great promises for building devices.  An everyday example of such a spintronic device is the magnetoresistive resistive read head used in todays harddrives.  In order to make further progress in tailoring materials for spintronic, we need to achieve a better understanding of how magnetic moments are formed in low carrier density systems. As this makes it possible to tune the magnetic and electric properties  of a compound at the same time. While we have today a good understanding on how magnetic moments are formed when they are well localized, our understanding is much less complete when the magnetism arises from the spin-polarization of different parts of the Fermi surface. For gaining this understanding good model systems are needed. With this proposal we plan to buy two essential components for the synthesis of FeGe which we consider as an excellent model compound for studying the underlying physics of spintronic materials.