Indium free zinc oxide thin film transistors for emerging applications

薄膜晶体管（TFT）正迅速成为技术领域中无处不在的一部分。它们是液晶显示器（LCD）的组成部分。除了硅技术，铟镓氧化锌（IGZO）也在生产中，正在形成下一代显示技术的支柱。铟在商业电子应用中的供应相对短缺。如果制造温度可以保持在非破坏性水平（<200℃），薄膜晶体管有望用于各种其他应用。这些晶体管可用于分布式开关和局部传感器放大问题，这些问题可以被认为是可打印的。提出的工作旨在扩展利用无铟低温技术的演示方法，该技术可以在几乎任何衬底上实现。

Thin Film Transistors (TFT) are rapidly becoming a ubiquitous part of the technology landscape. They are integral to the Liquid Crystal Display (LCD). Beyond silicon technologies, Indium Gallium Zinc Oxide (IGZO), are in production are forming the backbone of next generation display technologies. Indium is in relatively short supply for commercial electronics applications. Thin film transistors hold promise for a variety of other applications if manufacturing temperatures can be held to nondestructive levels (<200C). These transistors can be used for distributed switching and local sensor amplification problems that could be considered prinatable in nature. The proposed work seeks to expand on a demonstrated approach that utilizes an indium free low temperature technology that can be implemented on virtually any substrate.