Equipment for Developing Low-Dimensional Semiconductor Nanostructures for Deep Ultraviolet Optoelectronics, Solid State Lighting, and Solar Fuels

氮化物化合物半导体，包括GaN、InN、AlN及其合金，由于其从深紫外光(~6.2 eV)到近红外(~0.65 eV)的能隙可调，已成为深紫外光(UV)光电子学、固态照明和光伏发电的首选材料。MI已经在麦吉尔大学建立了分子束外延(MBE)生长基础设施。用于III-氮化物纳米半导体的研究和开发。通过使用这种MBE系统，分布在加拿大7所大学的15名申请者在这一领域做出了许多开创性的贡献。他们的一些突破性研究包括展示世界上最高效的无磷白光发光二极管(LED)，第一个在整个UVA-II波段(~315 nm到340 nm)的电注入激光器，以及第一个基于纳米线阵列的一步太阳能到氢气转换。然而，迫切需要一些关键组件，以便将研究活动扩展到深紫外光谱范围，并能够更有效地生长和表征III-氮化物纳米结构。这些组件包括用于MBE系统的快速样品加载/卸载的加载锁定模块，以及用于钝化III-氮化物纳米结构的表面状态和缺陷的硫渗出池。目前，在任何加拿大大学、公司或政府实验室中，没有其他适合开发这些项目所需的纳米级氮化物半导体的MBE生长系统。因此，迫切需要采购这些部件。这将大大加快他们的研究进度，将为申请者小组中的30多名学生/博士后提供一个动态的培训环境，并将有助于使加拿大在具有重要技术意义的氮化物材料、设备和系统方面崭露头角。

Nitride compound semiconductors, including GaN, InN, AlN, and their alloys, have emerged as the materials of choice for deep ultraviolet (UV) optoelectronics, solid state lighting, and photovoltaics, due to their tunable energy bandgap from the deep UV (~ 6.2 eV) to the near-infrared (~ 0.65 eV). Mi has established the molecular beam epitaxial (MBE) growth infrastructure at McGill Univ. for the research and development of III-nitride nanoscale semiconductors. With the use of this MBE system, the 15 applicants located in 7 universities across Canada have made many seminal contributions in this field. Some of their breakthrough research includes the demonstrations of the world's most efficient phosphor-free white light emitting didoes (LEDs), the first electrically injected lasers in the entire UVA-II band (~ 315 nm to 340 nm), and the first one-step solar-to-hydrogen conversion on nanowire arrays. However, some critical components are urgently needed in order to extend the research activities into the deep UV spectral range and to enable more efficient growth and characterization of III-nitride nanostructures. These components include a load lock module for rapid sample loading/unloading for the MBE system, and a sulfur effusion cell for passivating the surface states and defects of III-nitride nanostructures. There is currently no other MBE growth system in any Canadian Universities, companies, or government labs that are suitable for the development of nanoscale nitride semiconductors required for these projects. The acquisition of these components is therefore urgently needed. It will significantly accelerate their research progress, will lead to a dynamic training environment for the well over 30 students/postdocs in the applicants' group, and will be instrumental to put Canada on the map for the technologically important nitride-based materials, devices, and systems.