An RF Plasma Nitrogen Source for the Development of Nanoscale Nitride Semiconductors for Phosphor-Free Solid State Lighting, Solar Fuels, and Chip-Level Optical Communications

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Nitride compound semiconductors, including GaN, InN, AlN, and their alloys, have emerged as the materials of choice for solid state lighting, photovoltaics, chip-level optical communications, and high power and high temperature electronic devices. Upon joining McGill University in 2007, the applicant has established a molecular beam epitaxial (MBE) growth infrastructure for the research and development of III-nitride nanoscale semiconductors. In the last several years, his group has pioneered in the development III-nitride nanoscale semiconductors, including quantum dots and nanowires and their device applications. This unique MBE growth facility, the first of its kind in Canada, has enabled a wide range of research projects, including 8 NSERC Strategic and 2 NSERC I2I Projects on the emerging solid state lighting, solar cells, solar fuels, and chip-level optical communications. These research activities involve over twenty professors in 8 Canadian universities. However, the RF plasma nitrogen source, an essential component of the nitride MBE growth facility, has recently failed. As a consequence, progress in their research has been severely limited. There is currently no other MBE growth system in any Canadian Universities, companies, or government labs that are suitable for the development of nanoscale nitride semiconductors required for these projects. The acquisition of an RF plasma nitrogen source is therefore urgently needed. It will significantly accelerate their research progress, will lead to a dynamic training environment for the well over 60 students/postdocs in the applicants' group, and will be instrumental to put Canada on the map for the technologically important nitride-based materials, devices, and systems.