Ultrahigh-efficiency phosphor-free InGaN/GaN Dot-in-a-wire white light emitting diodes monolithically grown on silicon
Ultrahigh-efficiency phosphor-free InGaN/GaN Dot-in-a-wire white light emitting diodes monolithically grown on silicon
批准号:
413560-2011
负责人:
Mi, Zetian
金额:
$11.0万
依托单位:
依托单位国家:
加拿大
项目类别:
Strategic Projects - Group
财政年份:
2013
资助国家:
加拿大
项目状态:
已结题
起止时间:
2013-01-01 至 2014-12-31
中文摘要
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英文摘要
Making lighting more efficient represents one of the biggest challenges we face today. Solid state lighting, with the employment of LEDs, is well positioned to displace conventional lighting technologies, including fluorescent and high-intensity discharge lighting. However, the current solid state lamps rely on the use of phosphor coatings, which significantly increases the manufacturing cost and comprises the color rendering capability. In this project, we propose to develop ultrahigh efficiency phosphor-free white LEDs, with the objective to achieve an internal quantum efficiency of >80% and negligible efficiency droop. This project is solidly based on our recent achievement of InGaN/GaN dot-in-a-wire nanoscale heterostructures on Si
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