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Establishing protocols for fast, non-destructive, and large-area mapping of strain in semiconductor materials and devices

Establishing protocols for fast, non-destructive, and large-area mapping of strain in semiconductor materials and devices
建立半导体材料和器件中快速、无损、大面积应变绘图的协议
批准号:
483614-2015
负责人:
Moutanabbir, Oussama
金额:
$1.82万
依托单位国家:
加拿大
项目类别:
Engage Grants Program
财政年份:
2015
资助国家:
加拿大
项目状态:
已结题
起止时间:
2015-01-01 至 2016-12-31

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中文摘要
翻译
应变工程已经成为制造和加工各种电子产品的有力策略, 光电子和光伏设备。为了实现这些技术,已经有几个过程 建议在半导体中产生应变,以改善和控制其物理性能,方法是 利用应变对带隙结构的影响。这种菌株的重要性与日俱增 器件设计和制造中的带隙工程在这两个方面都提出了巨大的挑战 和人物刻画水平。后者尤其激起了人们对开发各种 精密探测超小半导体应变和应力的光谱和显微技术 设备和结构。到目前为止,传统的应变表征技术存在许多问题 限制了它们在半导体器件生产线的例行检查中的使用。 该项目通过建立快速、非破坏性和大面积的菌株图谱来解决这一问题 各种具有重要技术价值的半导体材料和器件。这一进程将得到实施 通过对S等人新开发的拉曼成像系统的改进,通过这个项目,我们 将扩展此仪器的功能,以解决材料和设备的检查问题 对电子、光电子、光伏应用至关重要。一项关于应变的精确研究 半导体材料将为Photon等公司提供强大的资产,在 半导体行业。
英文摘要
Strain engineering has been a powerful strategy in fabrication and processing of a variety of electronic, optoelectronic, and photovoltaic devices. To implement these technologies, several processes have been proposed to generate strain in semiconductors in order to improve and control their physical properties by exploiting the influence of strain on the bandgap structure. The increasing importance of this strain-induced bandgap engineering in design and fabrication of devices has raised significant challenges at both fabrication and characterization levels. The latter in particular has sparked a surge of interest in developing a variety of spectroscopic and microscopic techniques to precisely probe strain and stress in ultra small semiconductor devices and structures. Up to date, conventional strain characterization techniques suffer from a number of limitations that prevent their use in routine inspection in semiconductor device production lines. This project addresses this very issue by establishing a fast, non-destructive, and large area mapping of strain in a variety of technologically important semiconductor materials and devices. This process will be implemented by improving the newly developed Photon etc.'s system for Raman Imaging (RIMA). Through this project we will expand the capabilities of this instrument to address materials and devices inspection issues that are of critical importance for electronic, optoelectronic, photovoltaic applications. A precise study of strain in semiconductor materials will provide Photon etc. with a strong asset to develop new market opportunities in semiconductor industry.
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Nanoscale and Quantum Semiconductors
  • 批准号:
    CRC-2017-00229
  • 项目类别:
    Canada Research Chairs
  • 资助金额:
    $3.64万
  • 财政年份:
    2022
  • 负责人:
    Moutanabbir, Oussama
  • 依托单位:
Engineering Nanoscale and Quantum Phenomena in Emerging Electronic Materials
  • 批准号:
    RGPIN-2017-06893
  • 项目类别:
    Discovery Grants Program - Individual
  • 资助金额:
    $3.35万
  • 财政年份:
    2022
  • 负责人:
    Moutanabbir, Oussama
  • 依托单位:
Nanoscale And Quantum Semiconductors
  • 批准号:
    CRC-2017-00229
  • 项目类别:
    Canada Research Chairs
  • 资助金额:
    $7.29万
  • 财政年份:
    2021
  • 负责人:
    Moutanabbir, Oussama
  • 依托单位:
Engineering Nanoscale and Quantum Phenomena in Emerging Electronic Materials
  • 批准号:
    RGPIN-2017-06893
  • 项目类别:
    Discovery Grants Program - Individual
  • 资助金额:
    $3.35万
  • 财政年份:
    2021
  • 负责人:
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  • 依托单位:
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