Technology development of an intergrated GaN switch power module for totem-pole bridgeless boost converter

数据中心是全球经济的支柱，消耗大量能源。2014年，美国数据中心消耗了大约700亿千瓦时的电力，到2020年将翻一番。一个AC-DC整流器将AC电网电压转换到数据中心的主板上，为CPU、内存、网络端口等供电。第一级是功率因数校正（PFC）级，将AC电压转换为400 V DC，第二级是DC-DC转换器，将400 V转换为12 V。提高AC-DC整流器的效率是非常重要的，现有的AC-DC整流器都是采用40年前发展起来的MOSFET（金属氧化物半导体场效应晶体管）。MOSFET的性能已经达到其理论极限。新型GaN开关（氮化镓）是功率半导体技术的革命性进步，可显著提高电源效率。然而，现有的GaN开关设计与GaN开关所能达到的最佳设计之间仍然存在很大的技术差距。本项目将集中在数据中心整流器的PFC阶段。半桥GaN开关模块技术将被开发并应用于无桥Boost转换器中，以实现99%的效率，这将仅消耗不到MOSFET对应物的一半的损耗。这将使数据中心整流器达到Energy星星80 PLUS标准的最高钛效率级别。开发的技术也可用于数据中心整流器的第二阶段，提高其性能。随着该项目的完成，村田电力解决方案的多伦多设计中心将能够设计出全球最高效的数据中心电源，并扩大其在这一市场的销量。GaNSystems还将展示其用于服务器和其他电源的GaN开关的全部潜力。因此，该项目也将增加GaN系统的宣传和销售量，此外，该项目还将培养5名高素质人员（HQP）。

Data centers are the backbone of global economic and consume an enormous amount of energy. U.S datacenters consumed about 70 billion kilowatt-hours of electricity in 2014 and will double that amount by 2020.An AC - DC rectifier converts the AC grid voltage to the motherboard of the data center to power the CPU,memory, network ports, etc. It contains two stages. The first stage is the Power Factor Correction (PFC) stagewhich converts the AC voltage to 400V DC and the second stage is a DC-DC converter that converts 400V to12V. It is very important to increase the efficiency of the AC - DC Rectifier.The existing AC - DC rectifiers use MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) weredeveloped 40 years ago. The performance of MOSFET has reached its theoretical limits. The new GaN switch(Gallium Nitride) is a revolutionary advancement in power semiconductor technology and can significantlyimprove the efficiency of power supplies. However, there is still a big technical gap between the existing GaNswitch based designs and the optimum designs that could be achieved by GaN switches.This project will focus on the PFC stage of the data center rectifiers. A half-bridge GaN switch moduletechnology will be developed and employed in the bridgeless Boost converter to achieve 99% efficiency, whichwill only dissipate less than half of the loss of the MOSFET counterpart. This will enable the data centerrectifier to meet the highest Titanium efficiency level of Energy Star 80 PLUS standard. The developedtechnology can also be used in the second stage of the data center rectifiers and improve its performance.With the completion of this project, the Toronto design center of Murata Power Solutions will be able to designthe most efficient data center power supply in the world and expand its sales volume in this market. GaNSystems will also demonstrate the full potential of their GaN switches used in the server as well as other powersupplies. Therefore, the project will also increase the publicity and sales volume of GaN Systems.In addition, 5 Highly-Qualified-Personnel (HQP) will be trained in this project.