Engineering Nanoscale and Quantum Phenomena in Emerging Electronic Materials

该研究计划的主要目标是建立新的电子材料和设备，这些材料和设备具有纳米级和量子过程的可调特性。拟议的计划主要有三个轴：(1)等压编程一维纳米结构；(2)非平衡IV族量子结构；以及(3)非零带隙二维材料。第一个研究轴将在纳米线领域创造新的前沿，并通过利用稳定同位素之间的物理性质差异来实现新一代基于纳米线的设备。精确操纵不同的第四族半导体纳米线中的不同同位素将使纳米器件具有受控的核自旋分布。同位素诱导的质量无序也将被用来设计单个纳米设备的热导率。第二个研究轴将利用直接带隙、含锡的IV族半导体的发展来建立一类新的量子结构和器件，以研究腔内相干光子强度对光子辅助隧穿的影响。第三个研究轴旨在制定协议，以实现由V族元素组成的新的二维材料。这些材料表现出类似于石墨烯的量子限制和增强的输运性质，此外还具有非零带隙，这使它们在电子和光电子应用中具有重要意义。

The main objective of this Research Program is to establish new electronic materials and devices with tunable properties that are a consequence of nanoscale and quantum processes. The proposed Program is organized in three major axes: (1) Isotopically programmed one-dimensional nanostructures; (2) Non-equilibrium group IV quantum structures; and (3) Non-zero bandgap two-dimensional materials. The first research axis will create new frontiers in the field of nanowires and implement a new generation of nanowire-based devices by exploiting the difference in the physical properties between stable isotopes. The precise manipulation of different isotopes in individual group IV semiconductor nanowires will enable nanodevices with controlled nuclear spin distribution. The isotope-induced mass disorder will also be exploited to engineer the thermal conductivity within a single nanoscale device. The second research axis will capitalize on the development of direct bandgap, tin-containing group IV semiconductors to establish a novel family of quantum structures and devices to study the effects of intra-cavity coherent photon intensity on photon-assisted tunneling. The third research axis aims at establishing protocols to implement new two-dimensional materials made of group V elements. These materials exhibit quantum confinement and enhanced transport properties similar to graphene, in addition to a non-zero bandgap which makes them relevant for electronic and optoelectronic applications.