Technology development of an intergrated GaN switch power module for totem-pole bridgeless boost converter

数据中心是全球经济的支柱，消耗大量能源。2014年，美国数据中心消耗了约700亿千瓦时的电力，到2020年将翻一番。AC-DC整流器将交流电网电压转换到数据中心的主板上，为CPU、** 内存、网络端口等供电，它包含两个阶段。第一级是功率因数校正（PFC）级 **，将AC电压转换为400 V DC，第二级是DC-DC转换器，将400 V转换为 ** 12 V。提高AC - DC整流器的效率是非常重要的。**现有的交流-直流整流器使用金属氧化物半导体场效应晶体管（MOSFET）是40年前开发的。MOSFET的性能已经达到其理论极限。新型GaN开关 **（氮化镓）是功率半导体技术的革命性进步，可显著 ** 提高电源效率。然而，现有的基于GaN** 开关的设计与GaN开关可以实现的最佳设计之间仍然存在很大的技术差距。该项目将重点关注数据中心整流器的PFC阶段。将开发半桥GaN开关模块 ** 技术，并在无桥Boost转换器中使用，以实现99%的效率，其 ** 仅消耗不到MOSFET对应物一半的损耗。这将使数据中心 ** 整流器达到Energy星星80 PLUS标准的最高钛效率级别。开发的 ** 技术也可用于数据中心整流器的第二阶段，并提高其性能。**随着该项目的完成，村田电力解决方案的多伦多设计中心将能够设计 ** 全球最高效的数据中心电源，并扩大其在该市场的销售量。GaN**Systems还将展示其用于服务器以及其他电源 ** 的GaN开关的全部潜力。因此，该项目也将增加GaN Systems的宣传和销售量。此外，5名高素质人员（HQP）将在本项目中接受培训。

Data centers are the backbone of global economic and consume an enormous amount of energy. U.S data**centers consumed about 70 billion kilowatt-hours of electricity in 2014 and will double that amount by 2020.**An AC - DC rectifier converts the AC grid voltage to the motherboard of the data center to power the CPU,**memory, network ports, etc. It contains two stages. The first stage is the Power Factor Correction (PFC) stage**which converts the AC voltage to 400V DC and the second stage is a DC-DC converter that converts 400V to**12V. It is very important to increase the efficiency of the AC - DC Rectifier.**The existing AC - DC rectifiers use MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) were**developed 40 years ago. The performance of MOSFET has reached its theoretical limits. The new GaN switch**(Gallium Nitride) is a revolutionary advancement in power semiconductor technology and can significantly**improve the efficiency of power supplies. However, there is still a big technical gap between the existing GaN**switch based designs and the optimum designs that could be achieved by GaN switches.**This project will focus on the PFC stage of the data center rectifiers. A half-bridge GaN switch module**technology will be developed and employed in the bridgeless Boost converter to achieve 99% efficiency, which**will only dissipate less than half of the loss of the MOSFET counterpart. This will enable the data center**rectifier to meet the highest Titanium efficiency level of Energy Star 80 PLUS standard. The developed**technology can also be used in the second stage of the data center rectifiers and improve its performance.**With the completion of this project, the Toronto design center of Murata Power Solutions will be able to design**the most efficient data center power supply in the world and expand its sales volume in this market. GaN**Systems will also demonstrate the full potential of their GaN switches used in the server as well as other power**supplies. Therefore, the project will also increase the publicity and sales volume of GaN Systems.**In addition, 5 Highly-Qualified-Personnel (HQP) will be trained in this project.