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2D- and Nano-materials techniques for semiconductor integration

2D- and Nano-materials techniques for semiconductor integration
用于半导体集成的 2D 和纳米材料技术
批准号:
RGPIN-2020-04747
负责人:
Quitoriano, Nathaniel
金额:
$2.4万
依托单位:
依托单位国家:
加拿大
项目类别:
Discovery Grants Program - Individual
财政年份:
2021
资助国家:
加拿大
项目状态:
已结题
起止时间:
2021-01-01 至 2022-12-31

项目摘要

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中文摘要
翻译
几十年来,研究人员局限于设计与市售基板晶格匹配的器件;然而,最近,研究人员已经学会了如何设计一些晶格不匹配。这项工作产生了最先进的应变硅晶体管,高效(打破世界纪录)太阳能电池,以及获得诺贝尔奖的led。在过去的22年里,我一直从事高质量半导体材料集成工作,工作领域包括键合、梯度缓冲、纳米材料和横向生长。尽管取得了这些进步,但晶格失配仍然是一个挑战,并限制了器件的应用。在这个提案中,我们将继续开发一种横向的、晶格不匹配的生长技术,这是我们首创的并获得了专利。我们将把这项技术扩展到其他材料和生长方向。在这个提案中,我们也在追求一种新的使用二维材料的晶格不匹配生长技术。利用这些技术,我们将构建和演示新的高性能电子设备,如太阳能电池、激光器和探测器,这些设备可以直接与硅基集成电路集成。资助该研究项目将使不同的学生能够与专门培训学生软硬技能的顾问一起工作,并在他们的整个职业生涯中为他们提供指导和支持。
英文摘要
For decades researchers were limited to designing devices that were lattice-matched to a commercially available substrates; more recently, however, researchers have learned how to design around some lattice mismatch. This work has resulted in state-of-the-art, strained-Si transistors, efficient (world-record breaking) solar cells, and Nobel-prize-winning LEDs. I have worked in high-quality semiconductor materials integration for the past 22 years, working in bonding, graded buffers, nano-materials, and lateral growth. Despite these advances, lattice mismatch is an ongoing challenge and limits device applications. In this proposal we will continue developing a lateral, lattice-mismatched, growth technique which we pioneered and patented. We will extend the technology to other materials and growth orientations. In this proposal, we are also pursuing a new lattice-mismatched growth technology using 2D materials. Using these technologies, we will build and demonstrate novel and high-performing electronic devices such as, solar cells, lasers, and detectors which can be integrated directly with Si-based integrated circuits. Funding this research program will enable diverse students to work with an advisor dedicated to training students in hard and soft skills and to provide mentoring and support to them throughout their careers.
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2D- and Nano-materials techniques for semiconductor integration
  • 批准号:
    RGPIN-2020-04747
  • 项目类别:
    Discovery Grants Program - Individual
  • 资助金额:
    $2.4万
  • 财政年份:
    2022
  • 负责人:
    Quitoriano, Nathaniel
  • 依托单位:
2D- and Nano-materials techniques for semiconductor integration
  • 批准号:
    RGPIN-2020-04747
  • 项目类别:
    Discovery Grants Program - Individual
  • 资助金额:
    $2.4万
  • 财政年份:
    2020
  • 负责人:
    Quitoriano, Nathaniel
  • 依托单位:
Lattice-Mismatched Liquid Phase Epitaxy
  • 批准号:
    RGPIN-2015-03718
  • 项目类别:
    Discovery Grants Program - Individual
  • 资助金额:
    $1.6万
  • 财政年份:
    2019
  • 负责人:
    Quitoriano, Nathaniel
  • 依托单位:
Lattice-Mismatched Liquid Phase Epitaxy
  • 批准号:
    RGPIN-2015-03718
  • 项目类别:
    Discovery Grants Program - Individual
  • 资助金额:
    $1.6万
  • 财政年份:
    2018
  • 负责人:
    Quitoriano, Nathaniel
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