Nonstationary Transport in Semiconductor Device Modeling

半导体器件建模中的非平稳传输

• 批准号: 8714472
• 负责人: Dee-Son Pan
• 金额: --
• 依托单位: University of California-Los Angeles
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1987
• 资助国家: 美国
• 起止时间: 1987-06-15 至 1988-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8714472&HistoricalAwards=false
• 关键词: Nonstationary; Transport; Semiconductor; Device; Modeling

For 1 um Si MOSFETs, the spatial transient effect can make up to 20% modification of the local mobility. This effect is certainly larger in submicron devices. In this computational project, we will investigate this effect by both analytical techniques as well as Monte Carlo simulations on the San Diego Cray XMP. The goal is to understand the transport physics at small distances involved in submicron devices and to obtain a mobility formula, simple and accurate, to use in device simulators. The major computational technique will be Monte Carlo procedures. This is an expedited award for novel research, for which no funds have been granted. The PI has been granted 50 service units at the NSF Supercomputer Center at San Diego.

对于1um的Si MOSFET，空间瞬变效应可使局域迁移率的变化达到20%。这种影响在亚微米设备中当然更大。在这个计算项目中，我们将通过分析技术以及对圣地亚哥Cray XMP的蒙特卡罗模拟来研究这种影响。其目的是了解亚微米器件所涉及的小距离传输物理，并获得用于器件模拟器的简单而准确的迁移率公式。主要的计算技术将是蒙特卡罗程序。这是一项针对新奇研究的快速奖项，尚未授予任何资金。PI已经在圣地亚哥的NSF超级计算机中心获得了50个服务单位。