U.S.-China Cooperative Research (Solid State Physics): Elec-tronic Transport in Amorphous Silicon Multilayers

中美合作研究（固态物理）：非晶硅多层电子输运

• 批准号: 8718328
• 负责人: Hellmut Fritzsche
• 金额: $ 2.48万
• 依托单位: University of Chicago
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1988
• 资助国家: 美国
• 起止时间: 1988-08-15 至 1991-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8718328&HistoricalAwards=false
• 关键词: U.S.; China; Cooperative; Research; Solid

This proposal on "Electronic Transport in Amorphous Silicon Multilayers," between Dr. Hellmut Fritzsche of the University of Chicago and Professor CHEN Kunji of Nanjing University, is jointly sponsored by NSF and the State Educational Commission (SEDC) of China. The investigators point out that with amorphous semiconductors, it is possible to make ultrathin multilayers (superlattices) cheaper and out of many more materials than it is with crystalline semiconductors (microchips), as well as to extend the device possibilities to large sized applications inappropriate for small, fragile crystals. These amorphous semiconductors, consisting of hundreds of ultra thin layers of hydrogenated amorphous silicon and other materials, each layer either a few atomic layers thick to hundreds of atoms thick, possess several useful new transport properties which cannot be obtained in unlayered semiconductors, namely metastable conductance states which are produced by a short light pulse or by a high bias voltage. The quasi two dimensional nature of these multilayers allows new material properties to be designed. The investigators will explore the relation of these metastable and bistable conductance processes with the structure, defect concentration, and the hydrogen content of the multilayers.

由美国芝加哥大学的Hellmut Fritzsche博士和南京大学的陈坤基教授共同提出的关于“非晶硅多层中的电子输运”的论文，由美国国家科学基金会和中国国家教委共同资助。研究人员指出，使用非晶半导体，可以比使用晶体半导体（微芯片）更便宜地制造超薄多层（超晶格），并且可以使用更多的材料，并且可以将设备的可能性扩展到不适合小而脆弱的晶体的大尺寸应用中。这些非晶半导体由数百层氢化非晶硅和其他材料的超薄层组成，每层厚度从几个原子层到数百个原子层，具有几种有用的新输运性质，这些性质在非层状半导体中是无法获得的。即由短光脉冲或高偏置电压产生的亚稳态电导状态。这些多层材料的准二维性质允许设计新的材料特性。研究人员将探索这些亚稳态和双稳态电导过程与多层材料的结构、缺陷浓度和氢含量的关系。