Photo-induced Changes and Transport in Amorphous Semiconductors

非晶半导体中的光致变化和传输

• 批准号: 9408670
• 负责人: Hellmut Fritzsche
• 金额: $ 45万
• 依托单位: University of Chicago
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1994
• 资助国家: 美国
• 起止时间: 1994-08-01 至 1997-04-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9408670&HistoricalAwards=false
• 关键词: Photo; induced; Changes; Transport; Amorphous

9408670 Fritzsche Technical abstract: The research is aimed at understanding how light produces defects and other changes in the local structure of amorphous semiconductors. These changes can be beneficial such as in chalcogenide glasses used for photolithography or in Indium oxide films for controlling the electronic properties of transparent electrodes. On the other hand, they can be detrimental leading to photodegration of amorphous silicon solar cells. These photo-induced changes occur during recombination of photo-excited electron-hole pairs. The study of the temperature dependence of the recombination and transport of photocarriers and of the defect generation-kinetics will help us to understand the microscopic mechanisms of the light-induced changes. Use will be made of spatially confining the photocarriers in ultra-thin layers of amorphous semiconductors to explore the effect of reduced dimensionality. The light-induced changes will be used in Indium oxide to explore changes in electronic conduction ad the electronic states become localized. non-technical abstract: The research is aimed at understanding how light produces defects and other changes in the local structure of amorphous semiconductors. These changes can be beneficial such as in chalcogenide glasses used for photolithography or in Indium oxide films for controlling the electronic properties of transparent electrodes. On the other hand, they can be detrimental leading to photodegradation of amorphous silicon solar cells. The study of the temperature dependence of the recombination and transport of photocarriers and of the defect generation-kinetics will help us to understand the microscopic mechanisms of the light- induced changes. ***

9408670 Fritzsche 技术摘要：该研究旨在了解光如何在非晶半导体的局部结构中产生缺陷和其他变化。 这些变化可以是有益的，例如在用于光刻的硫属化物玻璃中或在用于控制透明电极的电子性质的氧化铟膜中。 另一方面，它们可能是有害的，导致非晶硅太阳能电池的光降解。 这些光致变化发生在光激发的电子-空穴对的复合过程中。 研究光生载流子复合和输运的温度依赖性以及缺陷产生动力学将有助于我们理解光致变化的微观机制。 利用空间限制的超薄层的非晶半导体的光生载流子，探索减少维数的效果。 光诱导的变化将用于氧化铟，以探索电子传导的变化和电子状态变得局部化。 非技术摘要：该研究旨在了解光如何在非晶半导体的局部结构中产生缺陷和其他变化。 这些变化可以是有益的，例如在用于光刻的硫属化物玻璃中或在用于控制透明电极的电子性质的氧化铟膜中。 另一方面，它们可能是有害的，导致非晶硅太阳能电池的光降解。 研究光生载流子复合和输运的温度依赖性以及缺陷产生动力学将有助于我们理解光致变化的微观机制。 ***