Photo-induced Changes and Transport in Amorphous Semiconductors

点击翻译按钮获取中文摘要

9408670 Fritzsche Technical abstract: The research is aimed at understanding how light produces defects and other changes in the local structure of amorphous semiconductors. These changes can be beneficial such as in chalcogenide glasses used for photolithography or in Indium oxide films for controlling the electronic properties of transparent electrodes. On the other hand, they can be detrimental leading to photodegration of amorphous silicon solar cells. These photo-induced changes occur during recombination of photo-excited electron-hole pairs. The study of the temperature dependence of the recombination and transport of photocarriers and of the defect generation-kinetics will help us to understand the microscopic mechanisms of the light-induced changes. Use will be made of spatially confining the photocarriers in ultra-thin layers of amorphous semiconductors to explore the effect of reduced dimensionality. The light-induced changes will be used in Indium oxide to explore changes in electronic conduction ad the electronic states become localized. non-technical abstract: The research is aimed at understanding how light produces defects and other changes in the local structure of amorphous semiconductors. These changes can be beneficial such as in chalcogenide glasses used for photolithography or in Indium oxide films for controlling the electronic properties of transparent electrodes. On the other hand, they can be detrimental leading to photodegradation of amorphous silicon solar cells. The study of the temperature dependence of the recombination and transport of photocarriers and of the defect generation-kinetics will help us to understand the microscopic mechanisms of the light- induced changes. ***